Determination of Oxygen Concentration in Silicon by Infrared Absorption

2009 ◽  
pp. 469-469-8 ◽  
Author(s):  
T Abe ◽  
S Gotoh ◽  
N Ozawa ◽  
T Masui
Keyword(s):  
Oxygen Concentration ◽  
Infrared Absorption

Determination of interstitial oxygen concentration in germanium by infrared absorption

2006 ◽  
Vol 100 (3) ◽  
pp. 033525 ◽  
Author(s):  
V. V. Litvinov ◽  
B. G. Svensson ◽  
L. I. Murin ◽  
J. L. Lindström ◽  
V. P. Markevich ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Infrared Absorption ◽  
Interstitial Oxygen

Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption

2005 ◽  
Vol 108-109 ◽  
pp. 735-740 ◽  
Author(s):  
Valentin V. Litvinov ◽  
Bengt Gunnar Svensson ◽  
L.I. Murin ◽  
J. Lennart Lindström ◽  
Vladimir P. Markevich
Keyword(s):  
Oxygen Concentration ◽  
Infrared Absorption ◽  
Secondary Ion Mass Spectrometry ◽  
Calibration Coefficient ◽  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Donor Formation ◽  
Kinetics Of ◽  
Secondary Ion

Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 5⋅1017 cm-3 a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm-1 with a proportionality coefficient CO = 0.95.1017 сm-2. It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 оС cannot be described properly with the application of calibration coefficient CO = 5.1016 cm-2, which is widely used for the determination of oxygen concentration in Ge crystals.

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