Measurement and Retention of Recombination Lifetime

2009 ◽  
pp. 148-148-11 ◽  
Author(s):  
PD Blais ◽  
CF Seiler
Keyword(s):  
Recombination Lifetime

A Novel Contactless Approach for Accurate Measurements of Electron-Hole Recombination Lifetime

1994 ◽  
Vol 173-174 ◽  
pp. 191-196
Author(s):  
G. Breglio ◽  
Antonello Cutolo ◽  
P. Spirito ◽  
L. Zeni
Keyword(s):  
Electron Hole ◽  
Recombination Lifetime ◽  
Hole Recombination

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Measurement ◽  
High Concentration ◽  
Recombination Lifetime ◽  
Light Emitting ◽  
Radiative Processes ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

scholarly journals Improving Electron Extraction Ability and Device Stability of Perovskite Solar Cells Using a Compatible PCBM/AZO Electron Transporting Bilayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 720 ◽  
Author(s):  
Hang Dong ◽  
Shangzheng Pang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Metal Electrode ◽  
Extraction Ability ◽  
Time Resolved ◽  
Recombination Lifetime ◽  
Transient Photovoltage ◽  
Device Stability ◽  
Hole Transporting ◽  
Electron Extraction

Due to the low temperature fabrication process and reduced hysteresis effect, inverted p-i-n structured perovskite solar cells (PSCs) with the PEDOT:PSS as the hole transporting layer and PCBM as the electron transporting layer have attracted considerable attention. However, the energy barrier at the interface between the PCBM layer and the metal electrode, which is due to an energy level mismatch, limits the electron extraction ability. In this work, an inorganic aluminum-doped zinc oxide (AZO) interlayer is inserted between the PCBM layer and the metal electrode so that electrons can be collected efficiently by the electrode. It is shown that with the help of the PCBM/AZO bilayer, the power conversion efficiency of PSCs is significantly improved, with negligible hysteresis and improved device stability. The UPS measurement shows that the AZO interlayer can effectively decrease the energy offset between PCBM and the metal electrode. The steady state photoluminescence, time-resolved photoluminescence, transient photocurrent, and transient photovoltage measurements show that the PSCs with the AZO interlayer have a longer radiative carrier recombination lifetime and more efficient charge extraction efficiency. Moreover, the introduction of the AZO interlayer could protect the underlying perovskite, and thus, greatly improve device stability.

Recombination lifetime studies of silicon spheres

1996 ◽  
Vol 41-42 ◽  
pp. 171-181 ◽  
Author(s):  
R AHRENKIEL ◽  
D LEVI ◽  
J ARCH
Keyword(s):  
Recombination Lifetime ◽  
Lifetime Studies ◽  
Silicon Spheres

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

2006 ◽  
Vol 532-533 ◽  
pp. 572-575
Author(s):  
Ming Zhou ◽  
Dong Qing Yuan ◽  
Li Peng Liu ◽  
Hui Xia Liu ◽  
Nai Fei Ren
Keyword(s):  
Femtosecond Laser ◽  
Relaxation Curve ◽  
Refraction Index ◽  
Free Carrier ◽  
Index Of Refraction ◽  
Lattice Temperature ◽  
Pump Probe ◽  
Recombination Lifetime ◽  
Carrier Effect ◽  
Carrier Recombination

Experiment setup of femtosecond laser pump probe was established, the time resolution of time-delay setting reached 67fs. By use of femtosecond laser with width of 30fs and wavelength is 796nm the dependence of transient change of reflectivity on delayed time in GaAs was measured by pump-probe method. By calculating the change of complex index of refraction (%n), free-carrier effect, lattice-temperature and carrier recombination contributions to relaxation curve was analyzed. When the carrier density N is 1.44×1018/cm3, free-carrier contribution to refraction index %nFC is -7.33×10-4, lattice-temperature %nLT is 0.85×10-4. Based on recombination rate equation, recombination lifetime of 980ps was deduced.

Sign in / Sign up

Export Citation Format

Share Document