Plasma Etching of Aluminum Alloys in BCL

2008 ◽  
pp. 202-202-10
Author(s):  
C-H Chen ◽  
S DeOrnellas ◽  
B Burke
Keyword(s):  
Aluminum Alloys ◽  
Plasma Etching

Analytical Electron Microscopy Study of Second-Phase Particles in 7075 and 7475 Aluminum Alloys

1985 ◽  
Vol 43 ◽  
pp. 348-349
Author(s):  
M. Raghavan ◽  
J. Y. Koo ◽  
J. W. Steeds ◽  
B. K. Park
Keyword(s):  
Aluminum Alloys ◽  
Silicon Oxide ◽  
Analytical Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Partial Substitution ◽  
Second Phase ◽  
X Ray ◽  
Second Phase Particles ◽  
Almost All

X-ray microanalysis and Convergent Beam Electron Diffraction (CBD) studies were conducted to characterize the second phase particles in two commercial aluminum alloys -- 7075 and 7475. The second phase particles studied were large (approximately 2-5μm) constituent phases and relatively fine ( ∼ 0.05-1μn) dispersoid particles, Figures 1A and B. Based on the crystal structure and chemical composition analyses, the constituent phases found in these alloys were identified to be Al7Cu2Fe, (Al,Cu)6(Fe,Cu), α-Al12Fe3Si, Mg2Si, amorphous silicon oxide and the modified 6Fe compounds, in decreasing order of abundance. The results of quantitative X-ray microanalysis of all the constituent phases are listed in Table I. The data show that, in almost all the phases, partial substitution of alloying elements occurred resulting in small deviations from the published stoichiometric compositions of the binary and ternary compounds.

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Electrochemical Impedance Characteristics of Sintered 7075 Aluminum Alloy Under Ssrt Condition

2013 ◽  
Vol 58 (2) ◽  
pp. 505-508 ◽  
Author(s):  
S. Sunada ◽  
N. Nunomura
Keyword(s):  
Aluminum Alloys ◽  
Complex Shape ◽  
Electrochemical Impedance ◽  
Ingot Metallurgy ◽  
View Point ◽  
Corrosion Properties ◽  
Electrochemical Tests ◽  
Impedance Characteristics ◽  
Polarization Test ◽  
Conventional Ingot

Powder metallurgy (P/M) process has the advantage of better formability to fabricate complex shape products without machining and welding. And recently this P/M process has been applied to the production of aluminum alloys. The P/M aluminum alloys thus produced also have received considerable interest because of their fine and homogeneous structure. Many papers have been published on the mechanical properties of the aluminum alloys produced by P/M process while there have been few on their corrosion properties from the view point of electrochemistry. In this experiment, therefore, two kinds of 7075 aluminum alloys prepared by the conventional ingot metallurgy (I/M) process and P/M process were used, I/M material is commercially available. and their corrosion behavior were investigated through the electrochemical tests such as potentiodynamic polarization test, slow rate strain tensile (SSRT) test and electrochemical impedance spectroscopy (EIS) measurement under SSRT test in the corrosion solution and the deionized water.

Metal-Assisted Plasma Etching of Silicon: A Liquid-Free Alternative to MACE

2018 ◽  
Author(s):  
Julia Sun ◽  
Benjamin Almquist
Keyword(s):  
Liquid Phase ◽  
Plasma Etching ◽  
Chemical Etching ◽  
Gold Films ◽  
Metallic Films ◽  
Au Catalyst ◽  
Feed Concentration ◽  
Catalytic Activities ◽  
Metal Assisted Chemical Etching ◽  
Complex Nanostructures

For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. Of these, two of the most common are reactive ion etching in the gaseous phase and metal-assisted chemical etching (MACE) in the liquid phase. Though these two methods are highly established and characterized, there is a surprising scarcity of reports exploring the ability of metallic films to catalytically enhance the etching of silicon in dry plasmas via a MACE-like mechanism. Here, we discuss a <u>m</u>etal-<u>a</u>ssisted <u>p</u>lasma <u>e</u>tch (MAPE) performed using patterned gold films to catalyze the etching of silicon in an SF<sub>6</sub>/O<sub>2</sub> mixed plasma, selectively increasing the rate of etching by over 1000%. The degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration is characterized, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu. Finally, methods of controlling the etch process are briefly explored to demonstrate the potential for use as a liquid-free fabrication strategy.

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