Reverse Thermal Wave Approximation for Temperature Transients in Optical Thin Films and Substrates — Reflective Optics for High Power Repetitive Pulsed Lasers

2009 ◽  
pp. 546-546-33
Author(s):  
JR Palmer
Keyword(s):  
Thin Films ◽  
High Power ◽  
Thermal Wave ◽  
Pulsed Lasers ◽  
Wave Approximation ◽  
Reflective Optics

Ultra-sensitive Absorption Diagnostics of Thin Films for High-power Laser Interference Coatings

2015 ◽  
Author(s):  
Jorge G. Rocca ◽  
Oscar E. Martinez ◽  
Carmen Menoni ◽  
Esteban Domene
Keyword(s):  
Thin Films ◽  
High Power ◽  
High Power Laser ◽  
Laser Interference ◽  
Power Laser

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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