Dislocation Loop Formation in Ion-Irradiated Polycrystalline Spinel and Alumina

2009 ◽  
pp. 749-749-15 ◽  
Author(s):  
SJ Zinkle
Keyword(s):  
Dislocation Loop ◽  
Loop Formation

scholarly journals MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2887-2892
Author(s):  
Brittany Muntifering ◽  
Jianmin Qu ◽  
Khalid Hattar
Keyword(s):  
Dislocation Loop ◽  
Hydrogen Isotope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Tem ◽  
Loop Formation ◽  
Radiation Induced ◽  
Formation And Evolution ◽  
And Performance ◽  
Induced Defects

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

In situ TEM and multiscale study of dislocation loop formation in the vicinity of a grain boundary

2020 ◽  
Vol 528 ◽  
pp. 151872 ◽  
Author(s):  
Qingshan Dong ◽  
Peyman Saidi ◽  
Laurent K. Béland ◽  
Zhongwen Yao ◽  
Cong Dai ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Dislocation Loop ◽  
In Situ Tem ◽  
Loop Formation

scholarly journals Cascade debris overlap mechanism of 〈100〉 dislocation loop formation in Fe and FeCr

2017 ◽  
Vol 119 (5) ◽  
pp. 56003 ◽  
Author(s):  
F. Granberg ◽  
J. Byggmästar ◽  
A. E. Sand ◽  
K. Nordlund
Keyword(s):  
Dislocation Loop ◽  
Loop Formation

The Effect of a Thin Sample on the Extended Defect Evolution in Si+ Implanted Si

1997 ◽  
Vol 490 ◽  
Author(s):  
Jing-Hong Li ◽  
Kevin S. Jones
Keyword(s):  
Dislocation Loop ◽  
Ex Situ ◽  
Dissolution Process ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Thin Sample ◽  
Extended Defect ◽  
Defect Evolution ◽  
Annealing Study

ABSTRACTThe annealing kinetics of implant damage in Si+ implanted Si has been investigated using in-situ and ex-situ annealing of transmission electron microscopy (TEM) samples prepared prior to annealing. The defect evolution at 800°C was studied for a Si wafer implanted with Si+ at 100keV to a dose of 2×1014 cm-2. This implant was above the sub-threshold loop formation threshold allowing one to study simultaneously the {311} defect dissolution and dislocation loop nucleation and growth. In order to study the effect on the defect evolution of using a thin sample for an in-situ annealing experiment, a pair of samples, one thick and one thinned into a TEM sample, were annealed in a furnace simultaneously. It was found that the presence of a second surface 2000Å below the implant damage did not affect the extended defect evolution. For the in-situ annealing study it was found that the {311} dissolution process and sub-threshold dislocation loop formation process was not affected by the TEM electron beam at 160kV as long as an 800°C furnace pre-anneal was done prior to in-situ annealing. The dissolution rate of the {311} defects was used to confirm the TEM holder furnace temperature. The results of both the in-situ the {311} defects is released during the 311 dissolution process and 30% comes to reside in dislocation loops. Thus, the loops appear to contain a significant fraction of the total interstitial concentration introduced by the implant.

Effects of Mn addition on dislocation loop formation in A533B and model alloys

2013 ◽  
Vol 439 (1-3) ◽  
pp. 268-275 ◽  
Author(s):  
H. Watanabe ◽  
S. Masaki ◽  
S. Masubuchi ◽  
N. Yoshida ◽  
K. Dohi
Keyword(s):  
Dislocation Loop ◽  
Loop Formation

scholarly journals Influence of welding and neutron irradiation on dislocation loop formation and α′ precipitation in a FeCrAl alloy

2019 ◽  
Vol 527 ◽  
pp. 151784 ◽  
Author(s):  
Dalong Zhang ◽  
Samuel A. Briggs ◽  
Philip D. Edmondson ◽  
Maxim N. Gussev ◽  
Richard H. Howard ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Dislocation Loop ◽  
Loop Formation ◽  
Fecral Alloy

Formation of a Prismatic Dislocation Loop in the Interface of a Circular Cylindrical Inclusion Embedded in a Thin Slab

2015 ◽  
Vol 83 (2) ◽  
Author(s):  
Jérôme Colin
Keyword(s):  
Dislocation Loop ◽  
Lattice Mismatch ◽  
Misfit Strain ◽  
Stability Diagram ◽  
Cylindrical Inclusion ◽  
Infinite Matrix ◽  
Loop Formation ◽  
Thin Slab ◽  
Lateral Extension ◽  
Prismatic Dislocation Loop

The introduction of a prismatic dislocation loop in the interface of an axisymmetric precipitate embedded in a thin slab of infinite lateral extension has been theoretically investigated. The critical misfit strain resulting from the lattice mismatch between the inclusion and the slab has been characterized for the loop formation versus the thickness of the slab and the radius of the inclusion. The case where the precipitate is embedded in a semi-infinite matrix is also discussed and a stability diagram of the structure is displayed with respect to the loop introduction versus the geometric and misfit parameters.

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