Residual Abrasive Material from Surface Grinding of Metal-Metal Hip Implants: A Source of Third-Body Wear?

2009 ◽  
pp. 125-125-10 ◽  
Author(s):  
A Wang ◽  
JD Bobyn ◽  
S Yue ◽  
JB Medley ◽  
FW Chan
Keyword(s):  
Surface Grinding ◽  
Hip Implants ◽  
Third Body ◽  
Abrasive Material ◽  
Metal Metal

Comparison ofin vitro within vivo characteristics of wear particles from metal-metal hip implants

2004 ◽  
Vol 70B (2) ◽  
pp. 167-178 ◽  
Author(s):  
Isabelle Catelas ◽  
John B. Medley ◽  
Pat A. Campbell ◽  
Olga L. Huk ◽  
J. Dennis Bobyn
Keyword(s):  
Wear Particles ◽  
Hip Implants ◽  
Metal Metal

Kinematics of the MATCO™ hip simulator and issues related to wear testing of metal-metal implants

1997 ◽  
Vol 211 (1) ◽  
pp. 89-99 ◽  
Author(s):  
J B Medley ◽  
J J Krygier ◽  
J D Bobyn ◽  
F W Chan ◽  
A Lippincott ◽  
...  
Keyword(s):  
Film Thickness ◽  
Contact Zone ◽  
Elastohydrodynamic Lubrication ◽  
Hertzian Contact ◽  
Wear Testing ◽  
Circular Path ◽  
Hip Implants ◽  
Hip Simulator ◽  
Metal Metal

Metal-metal hip implants have been used clinically in Europe to reduce the risk of wear particle induced osteolysis. Joint simulator devices could provide useful information for design improvement of the modern generation of metal-metal hip implants. Early wear results for metal-metal hip specimens were obtained using a MATCO™ hip simulator. A detailed kinematic analysis was developed for the MATCO™ simulator and applied to two of the wear experiments to predict the starting surface motion, contact zone and lubricant film thickness. It was shown that points on cup surfaces were not subjected to a reciprocating interaction with the head during wear at the beginning of testing but as wear proceeded, it was suggested that, in some cases, reciprocating interaction did occur on the cup surface. Comparison between simulator and in vivo kinematics suggested a more realistic representation for cup than for head wear. In the simulator, the Hertzian contact zone moved in a circular path over the cup surface and changed in size in correspondence with the applied load. Elastohydrodynamic lubrication was considered to be possible in the simulator, with estimated fluid film thickness as great as 0.1 μm. However, such thick films were not likely to have occurred at the start of the two wear tests which were examined in detail, although some mixed film lubrication might have accounted for the relatively low wear of one of the specimens. The inclusion of kinematic details, contact mechanics and elastohydrodynamic lubrication analysis in simulator testing protocols and in design of metal-metal hip implants was recommended.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Metal-Metal Cooperative Bond Activation by Heterobimetallic Alkyl, Aryl, and Acetylide PtII/CuI Complexes

2020 ◽  
Author(s):  
Shubham Deolka ◽  
Orestes Rivada Wheelaghan ◽  
Sandra Aristizábal ◽  
Robert Fayzullin ◽  
Shrinwantu Pal ◽  
...  
Keyword(s):  
Alkyl Group ◽  
Bond Activation ◽  
Bond Cleavage ◽  
Terminal Alkyne ◽  
Alkyl Aryl ◽  
Metal Metal ◽  
The Stability ◽  
Selective Formation ◽  
Organoplatinum Compounds

We report selective formation of heterobimetallic PtII/CuI complexes that demonstrate how facile bond activation processes can be achieved by altering reactivity of common organoplatinum compounds through their interaction with another metal center. The interaction of the Cu center with Pt center and with a Pt-bound alkyl group increases the stability of PtMe2 towards undesired rollover cyclometalation. The presence of the CuI center also enables facile transmetalation from electron-deficient tetraarylborate [B(ArF)4]- anion and mild C-H bond cleavage of a terminal alkyne, which was not observed in the absence of an electrophilic Cu center. The DFT study indicates that the role of Cu center acts as a binding site for alkyne substrate, while activating its terminal C-H bond.

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

Sign in / Sign up

Export Citation Format

Share Document