Characterization of Gate Dielectrics with Mercury Gate MOS Current-Voltage Measurements

2008 ◽  
pp. 65-65-9
Author(s):  
GA Gruber ◽  
RJ Hillard
Keyword(s):  
Gate Dielectrics ◽  
Current Voltage

Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics

Silicon ◽  
2021 ◽  
Author(s):  
G. Sujatha ◽  
N. Mohankumar ◽  
R. Poornachandran ◽  
R. Saravana Kumar ◽  
Girish Shankar Mishra ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Composite Channel ◽  
Noise Characterization

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Multilayer Films ◽  
Current Voltage

pH Influences on Optical Absorption of Anthocyanin from Black Rice as Sensitizer for Dye Sensitized Solar Cell TiO2 Nanoparticles

2016 ◽  
Vol 864 ◽  
pp. 154-158
Author(s):  
Mariya Al Qibtiya ◽  
Eka Cahya Prima ◽  
Brian Yuliarto ◽  
Suyatman
Keyword(s):  
Solar Cell ◽  
Optical Absorption ◽  
Dye Sensitized Solar Cell ◽  
Black Rice ◽  
X Ray ◽  
Dye Sensitized ◽  
Current Voltage ◽  
Average Grain Size ◽  
Uv Visible

Natural dyes extracted from black rice are used as sensitizer for dye sensitized solar cell. The anthocyanin extracted with various pH in acidic and neutral coditions. Preparation of fotolectrode TiO2 film using doctor blade method and resulting average grain size 33,9 nm using X-Ray Diffractometer. Characterization of morphology and cross-section film TiO2 is confirmed by Scanning Electron microscopy (SEM). Optical absorption using UV-Visible Spectroscopy to obtain spectrum absorbance of anthocyanin in various pH. The current-voltage (J-V) characterization shows the performance DSSC have a match relation to the optical absorption. The best absorption of anthocyanin obtained at pH 6 as well as conversion efficiency reaches 2.26% at this pH condition.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Electrical Characterization of Oxynitrided Gate Dielectrics under Constant‐Current Fowler‐Nordheim Stress

1997 ◽  
Vol 144 (9) ◽  
pp. 3299-3304 ◽  
Author(s):  
T. K. Nguyen ◽  
L. M. Landsberger ◽  
S. Belkouch ◽  
C. Jean
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characterization ◽  
Constant Current

Process and Manufacturing Challenges for High-K Gate Stack Systems

1999 ◽  
Vol 567 ◽  
Author(s):  
M.C. Gilmer ◽  
T-Y Luo ◽  
H.R. Huff ◽  
M.D. Jackson ◽  
S. Kim ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Gate Dielectrics ◽  
Electrical Characterization ◽  
Metal Electrode ◽  
Significant Variable ◽  
Tem Analysis ◽  
Physical Mechanisms ◽  
High K ◽  
Commercial Equipment

ABSTRACTA design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed in 100% or 10% O2 for different times and temperatures in conjunction with a previously prepared NH3 nitrided or 14N implanted silicon surface. Five metal electrode configurations—Ta, TaN, W, WN and TiN—were concurrently examined. Three additional silicon surface configurations were explored in conjunction with a more in-depth set of time and temperature anneals for Ta2O5. Electrical characterization of capacitors fabricated with the above high-K gate dielectrics, as well as SIMS and TEM analysis, indicate that the post high-K deposition annealing temperature was the most significant variable impacting the leakage current density, although there was minimal influence on the capacitance. Further studies are required, however, to clarify the physical mechanisms underlying the electrical data presented.

Amorphous Silicon TFTs on Steel-Foil Substrates

1996 ◽  
Vol 424 ◽  
Author(s):  
S. D. Theiss ◽  
S. Wagner
Keyword(s):  
Stainless Steel ◽  
Leakage Currents ◽  
Action Current ◽  
Insulating Layer ◽  
Stainless Steel Foil ◽  
Current Voltage ◽  
Stainless Steel Foils ◽  
Steel Foils ◽  
Current Behavior

AbstractWe describe the successful fabrication of device-quality a-Si:H thin-film transistors (TFTs) on stainless-steel foil substrates. These TFTs demonstrate that transistor circuits can be made on a flexible, non-breakable substrate. Such circuits could be used in reflective or emissive displays, and in other applications that require rugged macroelectronic circuits.Two inverted TFT structures have been made, using 200 gim thick stainless steel foils with polished surfaces. In the first structure we used the substrate as the gate and utilized a homemade mask set with very large feature sizes: L = 45 μm; W = 2.5 mm. The second, inverted staggered, structure used a 9500 Å a-SiNx:H passivating/insulating layer deposited on the steel to enable the use of isolated gates. For this structure we used a mask set which is composed of TFTs with much smaller feature sizes. Both TFT structures exhibit transistor action. Current-voltage characterization of the TFTs with the inverted staggered structure shows typical on/off current ratios of 107, leakage currents on the order of 10-12 A, good linear and saturation current behavior, and channel mobilities of 0.5 cm2/V·sec. These characteristics clearly identify the TFTs grown on stainless steel foil as being of device quality.

Cloning and characterization of an electrogenic Na/HCO3− cotransporter from the squid giant fiber lobe

2007 ◽  
Vol 292 (6) ◽  
pp. C2032-C2045 ◽  
Author(s):  
Peter M. Piermarini ◽  
Inyeong Choi ◽  
Walter F. Boron
Keyword(s):  
Giant Axon ◽  
Predicted Amino Acid Sequence ◽  
Giant Fiber ◽  
Reading Frame ◽  
Excitable Membranes ◽  
Current Voltage ◽  
Partial Cdna ◽  
Partial Cdna Clone ◽  
Current Voltage Relationship

The squid giant axon is a classic model system for understanding both excitable membranes and ion transport. To date, a Na+-driven Cl-HCO3− exchanger, sqNDCBE—related to the SLC4 superfamily and cloned from giant fiber lobe cDNA—is the only HCO3−-transporting protein cloned and characterized from a squid. The goal of our study was to clone and characterize another SLC4-like cDNA. We used degenerate PCR to obtain a partial cDNA clone (squid fiber clone 3, SF3), which we extended in both the 5′ and 3′ directions to obtain the full-length open-reading frame. The predicted amino-acid sequence of SF3 is similar to sqNDCBE, and a phylogenetic analysis of the membrane domains indicates that SF3 clusters with electroneutral Na+-coupled SLC4 transporters. However, when we measure pHi and membrane potential—or use two-electrode voltage clamping to measure currents—on Xenopus oocytes expressing SF3, the oocytes exhibit the characteristics of an electrogenic Na/HCO3− cotransporter, NBCe. That is, exposure to extracellular CO2/HCO3− not only causes a fall in pHi, followed by a robust recovery, but also causes a rapid hyperpolarization. The current-voltage relationship is also characteristic of an electrogenic NBC. The pHi recovery and current require HCO3− and Na+, and are blocked by DIDS. Furthermore, neither K+ nor Li+ can fully replace Na+ in supporting the pHi recovery. Extracellular Cl− is not necessary for the transporter to operate. Therefore, SF3 is an NBCe, representing the first NBCe characterized from an invertebrate.

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