Revisiting the Use of SiC as a Post Irradiation Temperature Monitor

2008 ◽  
pp. 623-623-11 ◽  
Author(s):  
LL Snead ◽  
AM Williams ◽  
AL Qualls
Keyword(s):  
Irradiation Temperature ◽  
Post Irradiation ◽  
Temperature Monitor

Influence of the Irradiation Temperature on the Formation of Defects in Reactor Pressure Vessel Steels

1996 ◽  
Vol 439 ◽  
Author(s):  
M. Große ◽  
A. Hempel ◽  
J. Böhmert ◽  
G. Brauer ◽  
F. M. Haggag
Keyword(s):  
Pressure Vessel ◽  
Irradiation Temperature ◽  
Reactor Pressure Vessel ◽  
Pressure Vessel Steel ◽  
Vessel Steel ◽  
Post Irradiation ◽  
Cu Content ◽  
Reactor Pressure Vessel Steel ◽  
Pressure Vessel Steels ◽  
Reactor Pressure

AbstractTwo heats of reactor pressure vessel steel type A533-B-1 differing in their Cu content (0.07 and 0.14 wt.-%) were irradiated to a fluence of 1* 1018 neutrons/cm2 at temperatures of 60, 121, and 288 °C, respectively. Their microstructure has been studied by SANS, SAXS, and PAS in the asirradiated and post-irradiation annealed stages and compared to the behaviour of unirradiated material and the results are discussed.

Characterization of β-Silicon Carbide and Potential Use as Irradiation Temperature Monitor

2019 ◽  
Vol 963 ◽  
pp. 362-366
Author(s):  
Jonas Vande Pitte ◽  
Christophe Detavernier ◽  
Johan Lauwaert ◽  
Inge Uytdenhouwen ◽  
Andrei Gusarov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Irradiation Temperature ◽  
Quantitative Comparison ◽  
Structural Defects ◽  
High Quality ◽  
Swelling Behaviour ◽  
Clear Trend ◽  
Temperature Monitor ◽  
Potential Use

Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality β-silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors.

Sign in / Sign up

Export Citation Format

Share Document