Feasibility Study of Mesoporous Silica MCM-41 Functionalization by Electron-Beam Irradiation

2021 ◽  
Vol 50 (1) ◽  
pp. 20200754
Author(s):  
S. Ghafoorzadeh ◽  
M. Askarbioki ◽  
E. Saniei ◽  
S. P. Shirmardi ◽  
S. Khakshournia ◽  
...  
Keyword(s):  
Electron Beam ◽  
Mesoporous Silica ◽  
Feasibility Study ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Mcm 41

Behavior of mesoporous silica under 2 MeV electron beam irradiation

2021 ◽  
Vol 328 ◽  
pp. 111454
Author(s):  
Jun Lin ◽  
Guillaume Toquer ◽  
Clara Grygiel ◽  
Sandrine Dourdain ◽  
Yannick Guari ◽  
...  
Keyword(s):  
Electron Beam ◽  
Mesoporous Silica ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

scholarly journals Effect of electron beam irradiation induced grafting of sialic acid onto polycaprolactone – Feasibility study

2018 ◽  
Vol 1 (1) ◽  
pp. 77-83
Author(s):  
Anand S. Deshmukh ◽  
Payal S. Jain ◽  
Pratik N. Chauhan ◽  
Tejraj M. Aminabhavi ◽  
Vikash Petwal ◽  
...  
Keyword(s):  
Electron Beam ◽  
Sialic Acid ◽  
Feasibility Study ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Feasibility Study on Functionalization of Mesoporous Titanium Dioxide by Electron Beam Irradiation for Smart Delivery of Oncology Drugs

2020 ◽  
Vol 50 (1) ◽  
pp. 20200192
Author(s):  
S. Ghafoorzadeh ◽  
M. Askarbioki ◽  
S. P. Shirmardi ◽  
S. Khakshournia ◽  
S. Kargar ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Electron Beam ◽  
Feasibility Study ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Mesoporous Titanium Dioxide

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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