Probe of the Replenishment Strategy and Grouping Rule in the Semiconductor Industry

2014 ◽  
Vol 42 (2) ◽  
pp. 20120146 ◽  
Author(s):  
Yung-Chia Chang ◽  
Kuei-Hu Chang ◽  
Yi-Chieh Lei
Keyword(s):  
Semiconductor Industry ◽  
Replenishment Strategy

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Analysis of completed commercial semiconductors using EPMA

1996 ◽  
Vol 54 ◽  
pp. 502-503
Author(s):  
R. Packwood ◽  
M.W. Phaneuf ◽  
V. Weatherall ◽  
I. Bassignana
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Semiconductor Industry ◽  
Detection Limits ◽  
High Technology ◽  
Depth Resolution ◽  
Analytical Instruments ◽  
Wide Range ◽  
Numerous Element ◽  
Choice Method

The development of specialized analytical instruments such as the SIMS, XPS, ISS etc., all with truly incredible abilities in certain areas, has given rise to the notion that electron probe microanalysis (EPMA) is an old fashioned and rather inadequate technique, and one that is of little or no use in such high technology fields as the semiconductor industry. Whilst it is true that the microprobe does not possess parts-per-billion sensitivity (ppb) or monolayer depth resolution it is also true that many times these extremes of performance are not essential and that a few tens of parts-per-million (ppm) and a few tens of nanometers depth resolution is all that is required. In fact, the microprobe may well be the second choice method for a wide range of analytical problems and even the method of choice for a few.The literature is replete with remarks that suggest the writer is confusing an SEM-EDXS combination with an instrument such as the Cameca SX-50. Even where this confusion does not exist, the literature discusses microprobe detection limits that are seldom stated to be as low as 100 ppm, whereas there are numerous element combinations for which 10-20 ppm is routinely attainable.

A History of the World Semiconductor Industry

IEE Review ◽  
1991 ◽  
Vol 37 (10) ◽  
pp. 355
Author(s):  
D.A. Gorham
Keyword(s):  
Semiconductor Industry ◽  
The World ◽  
History Of

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

Application of Novel Low Current OBIRCH Amplifier and Nanoprobing to Identify Subtle Leakages in Advanced Node Technologies

2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh
Keyword(s):  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Ring Oscillator ◽  
High Signal ◽  
The Novel ◽  
Resistance Change ◽  
Three Samples ◽  
Relative Threshold ◽  
First Time

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.

A Silicon Debugging Methodology on Customer Prototype for Wafer Foundries

2012 ◽  
Author(s):  
Mai Zhihong ◽  
Ng Tsu Hau ◽  
Dawood M. Khalid ◽  
Tan Pik Kee ◽  
Jeffrey Lam
Keyword(s):  
Case Studies ◽  
Semiconductor Industry ◽  
Full Information ◽  
Limited Information ◽  
Ip Protection ◽  
First Case ◽  
Silicon Debugging ◽  
Failure Location ◽  
Device Chip ◽  
Latch Up

Abstract IP protection is of major importance for a semiconductor company and only limited information is made available for device debugging for the product outsourced to a foundry. In order to position ourselves better in the ever competitive semiconductor industry, with the consideration of IP protection, we have to provide the customers with the Si debugging capability and device/chip verification services in foundry. This paper explores the Si debugging methodology and technique in a foundry. Two case studies are presented and discussed. The first case illustrates the isolation of the failure location by InGaAs microscopy, upon which the failure was identified to be caused by a latch-up issue. In the second case, due to confidentiality considerations from the customer, full information could not be provided to the foundry for silicon debugging. The paper illustrates the ability to effectively debug a failure despite being constrained by limited information from the customer.

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