Copper Pentagonal Micropyramids Grown by Mechanically Activated Electrodeposition

2018 ◽  
Vol 55 (1) ◽  
pp. 78-81
Author(s):  
A.A. Vikarchuk ◽  
N.N. Gryzunova ◽  
M.Yu. Gutkin ◽  
A.E. Romanov

Abstract The formation of copper pentagonal micropyramids (PMPs) with high (multiatomic) spiral growth steps, which are grown by electrocrystallization with mechanical activation of the cathode, is studied experimentally. A new spiral-layer growth mechanism for the formation of such PMP is proposed. It is shown that PMPs grow on flat pentagonal microcrystals (PMCs) formed initially and containing fivefold twins with one of the twin boundaries being inclined by the angle of 35°16’ to the {110}-type substrate crystallographic plane. Such crystal geometry causes an inclined growth step on the PMC surface. The preferential deposition of metal atoms on this step leads to the spiral-layer PMC growth and the formation of PMPs with a structure inherited from the PMCs.

2006 ◽  
Vol 39 (4) ◽  
pp. 563-570 ◽  
Author(s):  
M. A. Deij ◽  
J. H. Los ◽  
H. Meekes ◽  
E. Vlieg

Steps on surfaces are important in crystal growth theory, as the step free energy determines the two-dimensional nucleation rate, island growth, step flow and spiral growth. In this paper, it is illustrated that in general in lattice models the step energy of a single step cannot be determined directly by counting broken bonds. A new method is proposed that uses the geometry of a step together with the bonding topology, allowing for a straightforward determination of single-step energies for any case. The method is applied to an anisotropic Kossel model.


Author(s):  
Jie Chen ◽  
Jun Wang

Hexagon-shaped Zn oxide nano-pole films with terraces and steps have been successfully fabricated by means of a combined approach involving sol-gel process, high-temperature heat treatment, and the hydrothermal method. The surface chemistry and morphological features of the films were characterized by means of x-ray photoelectron spectroscopy and scanning electron microcopy. All the diffraction peaks in x-ray diffraction pattern match with those of the hexagonal wurtzite phase of Zn oxide. Transmittance measurements show that the optical transmittance of the sample synthesized at 520°C on quartz glass substrate is the highest, reaching about 65% in the visible-light region. Based on the detailed structural characterization and the nucleation-growth kinetics, we find that the whole crystallization process of wurtzite Zn oxide nano-poles includes nanocatalysis and layer-by-layer growth mechanism. The present study provides an important understanding of the growth mechanism for nano-pole synthesis of Zn oxide and related materials.


2004 ◽  
Vol 11 (04n05) ◽  
pp. 379-383 ◽  
Author(s):  
Y. L. GENG ◽  
D. XU ◽  
D. L. SUN ◽  
W. DU ◽  
H. Y. LIU ◽  
...  

Growth steps and 2D nuclei of the {100} faces of the deuterated L-arginine phosphate (DLAP) crystals have been studied using ex-situ atomic force microscopy (AFM). Straight steps along the b direction as well as meandered steps are detected. The bunched steps have wider terraces than the elementary ones, which are supposed to result from the slower growth rate of the former than the latter. Many 2D nuclei exist on the step terraces and edges acting as the growth sources. Occasionally, 2D islands generated by 2D nuclei could also be observed. In conclusion, the crystal grows by layer growth mechanism.


1993 ◽  
Vol 127 (1-4) ◽  
pp. 213-216 ◽  
Author(s):  
Toshinari Fujimori ◽  
Satoru Nagao ◽  
Hideki Gotoh

Author(s):  
J. V. Smith ◽  
H. S. Yoder

SummaryAn experimental and theoretical study has been made in order to determine the number and the structure of the possible polymorphs and to determine the structural relations between them. The simplest structures are 1M, 2M1, 2M2, 3T, 20, and 6H polymorphs, and more complicated types can be developed. Some of the previously described polymorphs were not contained in the theoretical list and were re-examined. The 6M structure was found to be a 2M2 polymorph, the 6-layer triclinic type was found to be a 2M1 polymorph, and the 3M structure was shown to be a 3T type. The 24-layer triclinic structure could be described on a simpler 8-layer cell. This type together with a new 12-layer monoclinic structure, as well as other structures of higher periodicity, presumably consists of complex stacking and results from spiral-growth mechanism. Two extreme types of layer-disordered crystals may be built and a disorder of individual ions may also occur. Single stacking faults result in twinned crystals. A new twin relation (180° rotation about the [100] axis) has been recognized. Twenty specimens from extreme geological environments have been examined in order to evaluate the control of environment on the stacking. The type of stacking could not be attributed solely to the influence of pressure and temperature. Composition appears to play a dominant role in the type of stacking, and semi-quantitative structural arguments appear to support this contention. The influence of growth mechanism is discussed. A scheme for the identification of the mica polymorphs by X-ray powder and single-crystal methods is given.


1984 ◽  
Vol 34 ◽  
Author(s):  
S. V. Subramanian ◽  
D. A. R. Kay ◽  
G. R. Purdy

ABSTRACTGraphite morphology in cast iron is analyzed in terms of the growth kinetics of graphite crystals in liquid iron. At small driving forces, i.e., low supersaturation or small kinetic undercooling, graphite growth is characterized by faceted growth, resulting in flake, compacted and spherulitic graphite morphologies. However, at large driving forces, there is a transition from facted to non-faceted growth, resulting in a dendritic growth morphology.Flake morphology is rationalized in terms of impurity dependent crystal growth mechanisms, whereas a spherulitic morphology is attributed to a defect controlled spiral growth mechanism. Compacted graphite morphology is considered as a transition between flake and spherulitic morphology.A thermodynamic approach is used to inter-relate the residual concentrations of impurities of technological interest, i.e. S and 0, as a function of the residual concentration of the reactive elements, Mg, Ca, and Ce in a typical cast iron melt at 1500'C and atmospheric pressure. Such a diagram that quantitatively relates graphite morphology in thick cast iron sections to soluble concentrations of impurities is referred to as a graphite morphology control diagram.In thin section castings that freeze at faster cooling rates and large kinetic undercoolings, the basal spiral growth mechanism dominates over the impurity controlled prism growth mechanism, leading to deviations from predictions based simply on the graphite morphology control diagram. In the ase of compacted graphite, where growth on both the prism and basal faces is involved, the degree of nodularity increases with the cooling rate, giving rise to section sensitivity.At large undercoolings, the prevention of the nucleation and growth of cementite is an essential feature of graphite morphology control. It is estimated that the mobility of the cementite interface exceeds that of the prism interface in flake graphite growth by an order of magnitude and that of the basal interface in spherulitic graphite growth by three orders of magnitude. In practice, the driving force for graphite growth is raised selectively through the addition of graphite stabilizing elements, such as silicon, which raise the temperature of the graphite eutectic and depress the temperature of the carbide eutectic. Kinetic growth undercooling can be decreased by increasing the number of heterogeneous nuclei for graphite growth through inoculation. The application of the above concepts for the control of graphite morphology in shaped automotive castings is discussed.


2015 ◽  
Vol 821-823 ◽  
pp. 209-212 ◽  
Author(s):  
Kassem Alassaad ◽  
Véronique Soulière ◽  
François Cauwet ◽  
Davy Carole ◽  
Beatrice Doisneau ◽  
...  

Starting from the previously demonstrated twin-free 3C-SiC growth on 4H-SiC when using Ge pre-deposition treatment, this work focuses on the understanding of the growth mechanism that stands behind this result. Toward this end, short growth experiments were performed to allow the investigation of the nucleation stage. Based on the experimental observations, a mechanism is proposed which involves a Ge-induced transient homoepitaxial growth step followed by 3C nucleation when large terraces are formed by step faceting. Lateral expansion of the 3C islands leads to orientation selection and twin boundary elimination. Similar results can be obtained when applying a Si-based pre-deposition treatment so that the crucial transient homoepitaxial step is promoted in fact by the presence of a liquid phase itself, no by its chemical nature.


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