Preparation and characterization of SiO2/fluoroalkyl-trialkoxysilane/2-hydroxyethyl methacrylate/trimethylolpropane triacrylate and SiO2/3-(trimethoxysilyl)propyl methacrylate/ 2-hydroxyethyl methacrylate/trimethylolpropane triacrylate coatings on glass substrates using the sol-gel method

2016 ◽  
Vol 36 (3) ◽  
pp. 309-320 ◽  
Author(s):  
Wei-Ming Chiu ◽  
Jhih-Siao Syu ◽  
Peir-An Tsai ◽  
Jyh-Horng Wu

Abstract Organic/inorganic hybrid materials were formed using the sol-gel process, in which SiO2/fluoroalkyl-trialkoxysilane (FAS)/2-hydroxyethyl methacrylate (2-HEMA)/trimethylolpropane triacrylate (TMPTA) and SiO2/3-(trimethoxysilyl)propyl methacrylate (MSMA)/ 2-HEMA/TMPTA thin films were formed on a glass substrate using dip coating. Experimental results revealed that FAS and MSMA improved the pencil hardness of SiO2/2-HEMA/TMPTA thin films without affecting their optical properties. FAS strengthened the hydrophobic and hydrophilic characteristics of SiO2/2-HEMA/TMPTA thin films more than did MSMA. However, an excess of FAS and an increase in withdrawal rates deteriorates the gloss, because both increased the SiO2 content, reducing the reflectivity.

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.


2005 ◽  
Vol 12 (05n06) ◽  
pp. 793-797 ◽  
Author(s):  
F. E. GHODSI ◽  
M. MAFAKHERI ◽  
A. NOVINROOZ

Thin films of Al 2 O 3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al 2 O 3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al 2 O 3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al 2 O 3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.


2008 ◽  
Vol 368-372 ◽  
pp. 326-328 ◽  
Author(s):  
M.T. Tsai ◽  
H.C. Chang ◽  
P.J. Tsai

Transparent ZnO and aluminum-doped zinc oxide (AZO) thin films were prepared via the sol-gel process on glass substrates using an alcoholic non-polyol route and spin-coater technique for film deposition. Zinc acetate, zinc chloride, and aluminum salt used as cations source. All the undoped and doped xerogel films were amorphous and converted into zincite structure after firing at 200 oC, irrespective of precursor types and dopant amounts. However, the evolution of morphology, microstructure, and texture of the gel films were strongly depended on the precursors and dopants. The films derived from zinc chloride showed strongly preferential (002) orientation, while acetate-derived films exhibited random orientation. On firing at 500 oC, the visible transmittances of films were 50~92%, depending on the kinds of precursors and dopant contents.


MRS Advances ◽  
2017 ◽  
Vol 2 (49) ◽  
pp. 2695-2700 ◽  
Author(s):  
Carlos Aquino López ◽  
Guillermo Carbajal-Franco ◽  
Fernanda Márquez Quintana ◽  
Alejandro Ávila Garcia

ABSTRACTIn this research, zinc chloride has been used as precursor and zinc oxide nanostructures have been synthesized by Sol-Gel process, using deionized water and 2-propanol as solvents in order to evaluate their influence on the final materials and their properties. Thin films of synthesized samples were deposited on glass substrates by the dipping method. The structure and morphology of crystals were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The electrical response of the samples to CO was investigated at different operating temperatures and sensitivity curves are presented for samples synthesized in water and 2-propanol (IsOH) solvents. The SEM analysis revealed that ZnO thin films have yielded to different morphologies depending on the solvent, and material was found on the non-immersed side of the substrate attributable to migration during the dip-coating process. XRD analysis shows that the samples present the ZnO wurtzite structure. In EDS analysis it was found the presence of chlorine on the sample, opening the possibility the presence of zinc oxychloride.


2009 ◽  
Vol 24 (8) ◽  
pp. 2541-2546 ◽  
Author(s):  
Eisuke Yokoyama ◽  
Hironobu Sakata ◽  
Moriaki Wakaki

ZrO2 thin films containing silver nanoparticles were prepared using the sol-gel method with Ag to Zr molar ratios [Ag]/[Zr] = 0.11, 0.25, 0.43, 0.67, 1.00, 1.50, and 2.33. After dip coating on glass substrate, coated films were annealed at 200 and 300 °C in air. X-ray diffraction peaks corresponding to crystalline Ag were observed, but a specific peak corresponding to ZrO2 was not observed. At the molar ratio [Ag]/[Zr] = 0.25, the particle size of Ag distributed broadly centered at 17 nm for an annealing temperature of 200 °C and at 25 nm for 300 °C. The films annealed in air at 200 °C showed an absorption band centered at 450 nm because of the silver surface plasmon resonance, whereas films heated at 300 °C in air caused a red shift of the absorption to 500 nm. The absorption peak was analyzed using the effective dielectric function of Ag-ZrO2 composite films modeled with the Maxwell-Garnett expression.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.


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