scholarly journals A Method for Continuous Tuning of MOSFET–RC Filters with Extended Control Range

2016 ◽  
Vol 67 (6) ◽  
pp. 449-453 ◽  
Author(s):  
Karolis Kiela ◽  
Romualdas Navickas
Keyword(s):  
Power Dissipation ◽  
Parameter Tuning ◽  
Cmos Technology ◽  
Filter Parameter ◽  
Control Range ◽  
Continuous Tuning ◽  
Active Feedback ◽  
Low Pass ◽  
Biquadratic Filter ◽  
Continuous Filter

Abstract In this paper a tuning structure for a MOSFET?RC filters is presented. The proposed tuning structure is composed of switched resistor banks with voltage controlled transistors. The voltage controlled transistors use active feedback with extended control range for continuous filter parameter tuning, without degrading the total linearity performance of the filter. The proposed tuning structure is tested by implementing it in a second order low pass biquadratic filter cell in 65 nm CMOS technology. The designed filter has a highly reconfigurable response, ranging from Chebyshev to Bessel, a tuneable -3 dB bandwidth from 10 MHz to 100 MHz and can be used for multiple standard wireless solutions. Filter IIP3 performance is not degraded when the bandwidth is continuously tuned by 40 % with a 1 V pp input. The maximum power dissipation, including active feedback circuits, is 17.2 mW from a 1.2 V source when the filter is tuned to 100 MHz bandwidth.

scholarly journals Floating Active Inductor Based Trans-Impedance Amplifier in 0.18 μm CMOS Technology for Optical Applications

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1547
Author(s):  
Xiangyu Chen ◽  
Yasuhiro Takahashi
Keyword(s):  
Power Dissipation ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Chip Area ◽  
Active Inductors ◽  
Low Pass ◽  
Optical Applications ◽  
Fifth Order

In this paper, a transimpedance amplifier (TIA) based on floating active inductors (FAI) is presented. Compared with conventional TIAs, the proposed TIA has the advantages of a wider bandwidth, lower power dissipation, and smaller chip area. The schematics and characteristics of the FAI circuit are explained. Moreover, the proposed TIA employs the combination of capacitive degeneration, the broadband matching network, and the regulated cascode input stage to enhance the bandwidth and gain. This turns the TIA design into a fifth-order low pass filter with Butterworth response. The TIA is implemented using 0.18 μ m Rohm CMOS technology and consumes only 10.7 mW with a supply voltage of 1.8 V. When used with a 150 fF photodiode capacitance, it exhibits the following characteristics: gain of 41 dB Ω and −3 dB frequency of 10 GHz. This TIA occupies an area of 180 μ m × 118 μ m.

Design of an Inverter-Base, Active-Feedback, Low-Power Transimpedance Amplifier Operating at 10 Gbps

2020 ◽  
pp. 2150110
Author(s):  
Sima Honarmand ◽  
Majid Pourahmadi ◽  
Mohammad Reza Shayesteh ◽  
Kavoos Abbasi
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Power Structure ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Frequency Bandwidth ◽  
Feedforward Network ◽  
Active Feedback ◽  
Simulation Results ◽  
Dc Current

In this paper, a low-power structure as an inverter-base circuit is reported for broadband applications. The focus in this study is in obtaining a low-power structure. By applying cascoded structure to an inverter as a feedforward network in the structure, the DC current and hence the power dissipation are decreased. Also, by adding a two-stage active feedback, which yields no miller capacitance, to the cascoded inverter, the structure of the TIA is completed. Simulation results in HSPICE using 90[Formula: see text]nm CMOS technology parameters show 41[Formula: see text]dB[Formula: see text] transimpedance gain, 6.5[Formula: see text]GHz frequency bandwidth and 2.7[Formula: see text][Formula: see text]Arms input referred noise, which consumes only 1.67[Formula: see text]mw power at 1[Formula: see text]V supply. Results and analysis indicate that the proposed TIA is suitable to work as a low-power 10 Gbps transimpedance amplifier in an optical receiver.

Towards the Design of Cost-efficient Generic Register Using Quantum-dot Cellular Automata

2020 ◽  
Vol 10 (4) ◽  
pp. 534-547
Author(s):  
Chiradeep Mukherjee ◽  
Saradindu Panda ◽  
Asish K. Mukhopadhyay ◽  
Bansibadan Maji
Keyword(s):  
Cellular Automata ◽  
Quantum Dot ◽  
Power Dissipation ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Digital Data ◽  
Design Parameters ◽  
Flip Flop ◽  
Quantum Dot Cellular Automata ◽  
Cost Efficient

Background: The advancement of VLSI in the application of emerging nanotechnology explores quantum-dot cellular automata (QCA) which has got wide acceptance owing to its ultra-high operating speed, extremely low power dissipation with a considerable reduction in feature size. The QCA architectures are emerging as a potential alternative to the conventional complementary metal oxide semiconductor (CMOS) technology. Experimental: Since the register unit has a crucial role in digital data transfer between the electronic devices, such study leading to the design of cost-efficient and highly reliable QCA register is expected to be a prudent area of research. A thorough survey on the existing literature shows that the generic models of Serial-in Serial Out (SISO), Serial-in-Parallel-Out (SIPO), Parallel-In- Serial-Out (PISO) and Parallel-in-Parallel-Out (PIPO) registers are inadequate in terms of design parameters like effective area, delay, O-Cost, Costα, etc. Results: This work introduces a layered T gate for the design of the D flip flop (LTD unit), which can be broadly used in SISO, SIPO, PISO, and PIPO register designs. For detection and reporting of high susceptible errors and defects at the nanoscale, the reliability and defect tolerant analysis of LTD unit are also carried out in this work. The QCA design metrics for the general register layouts using LTD unit is modeled. Conclusion: Moreover, the cost metrics for the proposed LTD layouts are thoroughly studied to check the functional complexity, fabrication difficulty and irreversible power dissipation of QCA register layouts.

scholarly journals 1.0 V-0.18 µm CMOS Tunable Low Pass Filters with 73 dB DR for On-Chip Sensing Acquisition Systems

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 563
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Dynamic Range ◽  
Low Voltage ◽  
Cutoff Frequency ◽  
Cmos Technology ◽  
Active Area ◽  
Current Steering ◽  
Low Pass ◽  
On Chip ◽  
Low Pass Filters

This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces.

A 25 Gbps VCSEL driving ASIC: an attempt for ultra-high-speed front-end readout applications

2022 ◽  
Vol 17 (01) ◽  
pp. C01040
Author(s):  
C. Zhao ◽  
D. Guo ◽  
Q. Chen ◽  
N. Fang ◽  
Y. Gan ◽  
...  
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
Test Results ◽  
Eye Diagram ◽  
Optical Links ◽  
Optical Module ◽  
Active Feedback ◽  
High Bandwidth ◽  
Output Driver ◽  
Very High

Abstract This paper presents the design and the test results of a 25 Gbps VCSEL driving ASIC fabricated in a 55 nm CMOS technology as an attempt for the future very high-speed optical links. The VCSEL driving ASIC is composed of an input equalizer stage, a pre-driver stage and a novel output driver stage. To achieve high bandwidth, the pre-driver stage combines the inductor-shared peaking structure and the active-feedback technique. A novel output driver stage uses the pseudo differential CML driver structure and the adjustable FFE pre-emphasis technique to improve the bandwidth. This VCSEL driver has been integrated in a customized optical module with a VCSEL array. Both the electrical function and optical performance have been fully evaluated. The output optical eye diagram has passed the eye mask test at the data rate of 25 Gbps. The peak-to-peak jitter of 25 Gbps optical eye is 19.5 ps and the RMS jitter is 2.9 ps.

scholarly journals A Flux Controlled Memristor using 90nm Technology

2021 ◽  
pp. 1-6
Author(s):  
B.T. Krishna ◽  
◽  
Shaik. mohaseena Salma ◽  
Keyword(s):  
Power Supply ◽  
Power Dissipation ◽  
Power Efficiency ◽  
Current Mode ◽  
Cmos Technology ◽  
Theoretical Simulation ◽  
Transconductance Amplifier ◽  
Higher Power ◽  
Static Power ◽  
A Current

A flux-controlled memristor using complementary metal–oxide–(CMOS) structure is presented in this study. The proposed circuit provides higher power efficiency, less static power dissipation, lesser area, and can also reduce the power supply by using CMOS 90nm technology. The circuit is implemented based on the use of a second-generation current conveyor circuit (CCII) and operational transconductance amplifier (OTA) with few passive elements. The proposed circuit uses a current-mode approach which improves the high frequency performance. The reduction of a power supply is a crucial aspect to decrease the power consumption in VLSI. An offered emulator in this proposed circuit is made to operate incremental and decremental configurations well up to 26.3 MHZ in cadence virtuoso platform gpdk using 90nm CMOS technology. proposed memristor circuit has very little static power dissipation when operating with ±1V supply. Transient analysis, memductance analysis, and dc analysis simulations are verified practically with the Experimental demonstration by using ideal memristor made up of ICs AD844AN and CA3080, using multisim which exhibits theoretical simulation are verified and discussed.

scholarly journals Approximate Adder: Lower-Part or Adder

2020 ◽  
Vol 9 (7) ◽  
pp. 1176-1180
Keyword(s):  
Real Time ◽  
Power Dissipation ◽  
High Performance ◽  
Building Blocks ◽  
Cmos Technology ◽  
Approximate Computing ◽  
Computing Technique ◽  
Ripple Carry Adder ◽  
Real Time Applications ◽  
Dsp Systems

High-performance VLSI systems are essential in real-time applications, in order to increase the performance of the VLSI systems, an approximate computing technique is followed where the performance of the circuit is enhanced by trading off it with a slight loss in the accuracy. These approximate circuits are used in error-tolerant applications, where output need not be accurate. This paper concentrates mainly on approximate adders, as they are major building blocks of DSP systems. The analysis of the Lower-part OR Adder for 4-bit addition and comparison of it with the precise adder i.e., Ripple Carry Adder using the mentor graphics tool in 90 nm CMOS technology are presented in this paper. Our experimental results show that there is 17%-70% savings in power dissipation, 4%-32% saving in the area, and 19%-84% savings in time due to approximate adder. As the LOA-2 and LOA-3 are performing optimally these two adders can be used for error-tolerant applications and based on the requirement LOA-2 or LOA-3 can be selected.

scholarly journals Design of a Novel CMOS Voltage Divider

2021 ◽  
Author(s):  
Darshil Patel
Keyword(s):  
Power Dissipation ◽  
Voltage Divider ◽  
Cmos Technology ◽  
Voltage Sensing ◽  
Steady Current ◽  
Current Consumption ◽  
Linear Voltage

Passive linear voltage dividers are an essential part of the voltage sensing and detecting circuits. In this paper, a novel voltage divider is designed in 180nm CMOS technology and is validated with LTSpice simulations. The proposed circuit features very low steady current consumption and as a result, very little power dissipation around 200-300pW.

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

scholarly journals Analysis On Power Gating Circuits Based Low Power VLSI Circuits (BCD Adder)

2021 ◽  
Vol 2089 (1) ◽  
pp. 012080
Author(s):  
M. Srinivas ◽  
K.V. Daya Sagar
Keyword(s):  
Energy Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Leakage Power ◽  
Vlsi Circuits ◽  
Battery Life

Abstract Currently, energy consumption in the digital circuit is a key design parameter for emerging mobile products. The principal cause of the power dissipation during idle mode is leakage currents, which are rising dramatically. Sub-threshold leakage is increased by the scaling of threshold voltage when gate current leakage increases because oxide thickness is scaled. With rising demands for mobile devices, leakage energy consumption has received even greater attention. Since a mobile device spends most of its time in standby mode, leakage power savings need to prolong the battery life. That is why low power has become a significant factor in CMOS circuit design. The required design and simulation of an AND gate with the BSIM4 MOS parameter model at 27 0C, supply voltage of 0,70V with CMOS technology of 65nm are the validation of the suitability of the proposed circuit technology. AND simulation. The performance parameters for the two AND input gate are compared with the current MTCMOS and SCCMOS techniques, such as sub-threshold leakage power dissipations in active and standby modes, the dynamic dissipation, and propagation period. The proposed hybrid super cutoff complete stack technique compared to the current MTCMOS technology shows a reduction in sub-threshold dissipation power dissipation by 3. 50x and 1.15x in standby modes and active modes respectively. The hybrid surface-cutting technique also shows savings of 2,50 and 1,04 in power dissipation at the sub-threshold in standby modes and active modes compared with the existing SCCMOS Technique.

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