Recombination Centre

2016 ◽  
Author(s):  
Silvia E. Braslavsky ◽  
André M. Braun ◽  
Alberto E. Cassano ◽  
Alexei V. Emeline ◽  
Marta I. Litter ◽  
...  
Keyword(s):  
Recombination Centre

Photoluminescence Study of Radiative Recombination in Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Chun Wang ◽  
Franco Gaspari ◽  
Stefan Zukotynski
Keyword(s):  
Porous Silicon ◽  
Excited States ◽  
Ground State ◽  
Radiative Recombination ◽  
Single Electron ◽  
Photoluminescence Study ◽  
Recombination Centre ◽  
Electron Center ◽  
Recombination Centers

AbstractPhotoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

Low-temperature VUV photoluminescence and thermoluminescence of UV excited afterglow phosphor Sr3AlxSi1−xO5:Ce3+,Ln3+ (Ln = Er, Nd, Sm, Dy and Tm)

2015 ◽  
Vol 17 (23) ◽  
pp. 15419-15427 ◽  
Author(s):  
Hongde Luo ◽  
Adrie J. J. Bos ◽  
Anna Dobrowolska ◽  
Pieter Dorenbos
Keyword(s):  
Low Temperature ◽  
Electron Traps ◽  
Recombination Centre

Low-temperature thermoluminescence measurements of Ce doped Sr3SiO5 show that Ce3+ is the recombination centre and Nd, Sm, Dy and Tm work as electron traps with trap depths of 0.95 eV, 1.89 eV, 1.02 eV, and 1.19 eV, respectively.

Gold as a recombination centre in silicon

1965 ◽  
Vol 8 (8) ◽  
pp. 685-691 ◽  
Author(s):  
J.M. Fairfield ◽  
B.V. Gokhale
Keyword(s):  
Recombination Centre

Photoelectric Investigation of Recombination Centre Parameters in InP(Fe)

1983 ◽  
Vol 79 (2) ◽  
pp. 593-597 ◽  
Author(s):  
L. Z. Mirets ◽  
G. P. Peka ◽  
S. I. Radautsan ◽  
E. V. Russu
Keyword(s):  
Recombination Centre

Reconstruction of the Recombination Centre Distribution in Dislocation Impurity Atmosphere in Si

1996 ◽  
Vol 51-52 ◽  
pp. 123-130
Author(s):  
I.E. Bondarenko ◽  
O.V. Kononchuk ◽  
V. Sirotkin
Keyword(s):  
Recombination Centre
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