Thermoelectromotive Force

2016 ◽  
Author(s):  
Masahide Terazima ◽  
Noboru Hirota ◽  
Silvia E. Braslavsky ◽  
Andreas Mandelis ◽  
Stephen E. Bialkowski ◽  
...  
Keyword(s):  
Thermoelectromotive Force

A duplex commutator and key of small thermoelectromotive force

1934 ◽  
Vol 11 (4) ◽  
pp. 116-118
Author(s):  
N R Campbell ◽  
O Kantorowicz
Keyword(s):  
Thermoelectromotive Force

scholarly journals Thermoelectromotive Force of Some Redox Couples in an Amide-type Room-temperature Ionic Liquid

2009 ◽  
Vol 77 (8) ◽  
pp. 639-641 ◽  
Author(s):  
Tsubasa MIGITA ◽  
Naoki TACHIKAWA ◽  
Yasushi KATAYAMA ◽  
Takashi MIURA
Keyword(s):  
Ionic Liquid ◽  
Room Temperature ◽  
Room Temperature Ionic Liquid ◽  
Thermoelectromotive Force ◽  
Redox Couples

The Thermoelectromotive Force of Copper-Manganese Alloys

1922 ◽  
Vol 20 (5) ◽  
pp. 441-451 ◽  
Author(s):  
Skezug Kimura ◽  
Zunehachi Isawa
Keyword(s):  
Thermoelectromotive Force ◽  
Manganese Alloys ◽  
Copper Manganese

Measurement of Carrier Concentration of Si by One Pair of Hot and Cold Needles

2011 ◽  
Vol 421 ◽  
pp. 107-109
Author(s):  
Yu Zhao ◽  
Yan Yan Zhu
Keyword(s):  
Carrier Concentration ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Method ◽  
Theoretical Computation ◽  
Thermoelectromotive Force ◽  
Hot Probe

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of Si was put forward. The dependence of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

Measurement of Semiconductor Silicon Wafer’s Doping Concentration and it’s Uniformity Based on Thermo-Needles Method

2012 ◽  
Vol 239-240 ◽  
pp. 726-729
Author(s):  
Qiao Liang Wang ◽  
Yu Zhao ◽  
Rui Feng Lv ◽  
Yan Yan Zhu
Keyword(s):  
Carrier Concentration ◽  
Silicon Wafer ◽  
Doping Concentration ◽  
Semiconductor Industry ◽  
Semiconductor Material ◽  
New Method ◽  
Theoretical Computation ◽  
Thermoelectromotive Force ◽  
Semiconductor Silicon ◽  
Hot Probe

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of silicon wafer was put forward. The dependen curve of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. With the help of Origin software, slope of curve was obtained.Accoeding to related formula,the doping concentartion and it’s uniformity were figured out finally .Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

Basic study of high Tc superconducting magnet excited by thermoelectromotive force

Cryogenics ◽  
2003 ◽  
Vol 43 (10-11) ◽  
pp. 571-574
Author(s):  
Michitaka Ono ◽  
Toru Kuriyama ◽  
Junji Ueda ◽  
Tetsuji Okamura
Keyword(s):  
Superconducting Magnet ◽  
Basic Study ◽  
High Tc ◽  
Thermoelectromotive Force

The thermoelectric performance of silicon carbide semiconductor made from rice hull

1995 ◽  
Vol 410 ◽  
Author(s):  
E. Maed A ◽  
M. Komatsu
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Thermoelectric Properties ◽  
Rice Hull ◽  
Nitrogen Gas ◽  
Porous Silicon Carbide ◽  
Thermoelectromotive Force ◽  
Type Semiconductor ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

ABSTRACTThermoelectric properties (Thermoelectromotive force and electrical conductivity) of porous silicon carbide ceramics are evaluated. Porous silicon carbide ceramics are made from rice hull by reacting silica and carbon, both of which are included in rice hull, using hotpressing method[1].When nitrogen gas is used as enviromental gas for hotpressing, this material becomes n-type semiconductor. It shows comparably high themoelectromotive force. Thermoelectric properties of this material change with the processing conditions.The relationship between thermoelectric properties and microstructure is also evaluated.

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