scholarly journals ZnO-assisted coating of tetracalcium phosphate/ gelatin on the polyethylene terephthalate woven nets by atomic layer deposition

e-Polymers ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 85-91
Author(s):  
Xinyi Zhang ◽  
Juan Zhou ◽  
Jiejun Cheng ◽  
Jun Zhu ◽  
Dannong He
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Contact Angles ◽  
Confocal Imaging ◽  
Future Application ◽  
Water Contact ◽  
Nih3t3 Cells ◽  
Tetracalcium Phosphate ◽  
Layer Deposition ◽  
Good Biocompatibility

AbstractA new kind of coating consisting of zinc oxide (ZnO)/tetracalcium phosphate (TTCP)/gelatin (Gel) on the PET woven nets is prepared chemically by the method of atomic layer deposition (ALD) and hydrothermal method. The prepared materials are confirmed by XRD and SEM. XRD results show that ZnO and TTCP are well coated on the surface of PET woven nets and ALD-assisted ZnO leads to a surprising coating adhesion of about 8 MPa. Furthermore, SEM results indicate the diameter and morphology of ZnO, TTCP and Gel of PET woven nets. And the water contact angles of PET’s surface are decreased with ZnO, TTCP and Gel of PET woven nets. Moreover, the confocal imaging of NIH3T3 cells shows that the obtained product could promote the cells proliferation, which indicates that the good biocompatibility of the prepared PET/ZnO/TTCP/ Gel woven builds a foundation for their future application. The results aim to obtain an efficient method to modify PET for fabricating an ideal artificial implant meeting the clinical needs, and imply a positive effect in promoting the compatibility of PET for enhancing graft-bone healing after implantation.

scholarly journals Thermal Atomic Layer Deposition of Yttrium Oxide Films and Their Properties in Anticorrosion and Water Repellent Coating Applications

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 497
Author(s):  
Christian Dussarrat ◽  
Nicolas Blasco ◽  
Wontae Noh ◽  
Jooho Lee ◽  
Jamie Greer ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Yttrium Oxide ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Contact Angles ◽  
Water Repellent ◽  
Water Contact ◽  
Air Exposure ◽  
Layer Deposition

The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecular oxygen. Saturation was observed for the growth of the Y2O3 films within an ALD window of 300 to 450 °C and a growth per cycle (GPC) up to 1.1 Å. The resulting Y2O3 films possess a smooth and crystalline structure, while avoiding any carbon and nitrogen contamination, as observed by X-ray photoelectron spectroscopy (XPS). The films showed strong resistance to fluorine-containing plasma, outperforming other resistant materials, such as silicon oxide, silicon nitride and alumina. Interestingly, the hydrophilic character exhibited by the film could be switched to hydrophobic after exposure to air, with water contact angles exceeding 90°. After annealing under N2 flow at 600 °C for 4 min, the hydrophobicity was lost, but proved recoverable after prolonged air exposure or intentional hydrocarbon exposure. The origin of these changes in hydrophobicity was examined.

Atomic layer deposition of Cu2S for future application in photovoltaics

2009 ◽  
Vol 94 (12) ◽  
pp. 123107 ◽  
Author(s):  
Alex B. F. Martinson ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Future Application ◽  
Layer Deposition

Facile fabrication of ultraviolet-protective silk fabrics via atomic layer deposition of TiO2 with subsequent polyvinylsilsesquioxane modification

2018 ◽  
Vol 89 (17) ◽  
pp. 3529-3538 ◽  
Author(s):  
Huiyu Yang ◽  
Yaling Wang ◽  
Keshuai Liu ◽  
Xin Liu ◽  
Fengxiang Chen ◽  
...  
Keyword(s):  
Contact Angle ◽  
Atomic Layer Deposition ◽  
Water Contact Angle ◽  
Uv Light ◽  
Water Repellency ◽  
Atomic Layer ◽  
Water Contact ◽  
Force Microscopy ◽  
Layer Deposition ◽  
Silk Fabrics

To develop ultraviolet (UV) light-protective silk fabrics (SFs), a conformal nanoscale TiO2 coating was deposited using an atomic layer deposition (ALD) method, and polyvinylsilsesquioxanes (PVSs) were further coated onto the SFs to enhance their hydrophobicity and UV light-resistance. Scanning electron microscopy and atomic force microscopy revealed hierarchical microstructures and nanostructures of the TiO2 coatings, which were primarily responsible for the increase of the water contact angle from approximately 0 to 120° after the ALD process. A high mean square surface roughness of 76.325 nm also accounted for this improved water contact angle. Furthermore, TiO2-coated SFs modified with low surface energy PVSs exhibited enhanced hydrophobic properties. More importantly, both the UV-blocking and yellowing-resistance of the SFs were improved without any significant change to the luster of the SFs. The ease and simplicity of this fabrication method makes it applicable to the preparation of multifunctional textiles with both good water repellency and UV-resistance.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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