Investigation of the Thermoelectric Power Factor of KOH-Treated PEDOT:PSS Dispersions for Printing Applications

2016 ◽  
Vol 3 (1) ◽  
Author(s):  
Lukas Stepien ◽  
Aljoscha Roch ◽  
Sarah Schlaier ◽  
Ines Dani ◽  
Anton Kiriy ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Seebeck Coefficient ◽  
Power Output ◽  
Conductive Polymer ◽  
Nir Spectroscopy ◽  
Thermoelectric Power Factor ◽  
Strong Base ◽  
Acid Component ◽  
Flexible Behavior ◽  
Pedot Chain

AbstractThis work studies the modification of commercially available dispersions of intrinsically conductive polymer PEDOT:PSS with a strong base, KOH. It is concluded that addition of base derives a dedoping of the PEDOT chain and increase Seebeck coefficient from 15 µV/K to 90 µV/K. Supportive UV-Vis-NIR spectroscopy was used for tracking the doping level of the polymer. A surface morphology study of the dedoped PEDOT:PSS films was monitored by SEM. It was shown that if KOH is used in excess with respect to the acid component of PEDOT:PSS dispersions, it segregates at the surface forming crystallites. They, however could be easily removed by methanol rinsing without destroying the sample integrity. After material modification, a dispenser-printed polymer unileg-TEG with 61 unicouples was fabricated by printing. The TEG in form of 253 mm-long stripe shows a flexible behavior. At 90 K temperature difference a resulting power output of ~ 100 nW could be measured. We suggest that the low power output is due to a high internal generator resistance.

Solution-processable flexible thermoelectric composite films based on conductive polymer/SnSe0.8S0.2 nanosheets/carbon nanotubes for wearable electronic applications

2018 ◽  
Vol 6 (14) ◽  
pp. 5627-5634 ◽  
Author(s):  
Hyun Ju ◽  
Dabin Park ◽  
Jooheon Kim
Keyword(s):  
Carbon Nanotubes ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Composite Films ◽  
Conductive Polymer ◽  
Solution Processing ◽  
Thermoelectric Power Factor ◽  
Processing Procedure ◽  
Wearable Electronic ◽  
Flexible Thermoelectric

Flexible thermoelectric composite films with a high thermoelectric power factor are achieved via a solution processing procedure.

Quantum Interference Enhanced Thermoelectricity in Ferrocene Based Molecular Junctions

2019 ◽  
Vol 19 (11) ◽  
pp. 7452-7455
Author(s):  
Ashkan Vakilipour Takaloo ◽  
Hatef Sadeghi
Keyword(s):  
Seebeck Coefficient ◽  
Single Molecule ◽  
Power Factor ◽  
Quantum Interference ◽  
Room Temperature ◽  
Thermoelectric Power Factor ◽  
Molecular Scale ◽  
Single Molecule Junctions ◽  
Path Structure ◽  
Single Path

Recent experimental indications of room-temperature quantum interference in the sub-nanometer single molecules suggest that such effects could be utilized to engineer thermoelectric properties of organic single molecule junctions. In this paper, we show that the thermoelectric power factor is significantly enhanced in double path ferrocene cycles compared to the single path counterpart. Due to quantum interference in the double path structure, the Seebeck coefficient is significantly enhanced while the conductance is less affected compared to single path structure. The power factor of the ferrocene cycles are 1–2 orders of magnitude higher than the best organic material reported today. This opens new avenues for future molecular scale organometallic thermoelectricity.

scholarly journals Influence of crystallinity on the thermoelectric power factor of P3HT vapour-doped with F4TCNQ

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1593-1599 ◽  
Author(s):  
Jonna Hynynen ◽  
David Kiefer ◽  
Christian Müller
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Order Of Magnitude

The crystallinity of P3HT strongly benefits the electrical conductivity but not Seebeck coefficient, leading to an increase in power factor by one order of magnitude.

scholarly journals The Molecular Weight Dependence of Thermoelectric Properties of Poly (3-Hexylthiophene)

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1404 ◽  
Author(s):  
Saeed Mardi ◽  
Marialilia Pea ◽  
Andrea Notargiacomo ◽  
Narges Yaghoobi Nia ◽  
Aldo Di Carlo ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Molecular Weight ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Thermoelectric Power Factor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Molecular Weight Dependence ◽  
Vis Spectroscopy ◽  
Afm Analysis

Organic materials have been found to be promising candidates for low-temperature thermoelectric applications. In particular, poly (3-hexylthiophene) (P3HT) has been attracting great interest due to its desirable intrinsic properties, such as excellent solution processability, chemical and thermal stability, and high field-effect mobility. However, its poor electrical conductivity has limited its application as a thermoelectric material. It is therefore important to improve the electrical conductivity of P3HT layers. In this work, we studied how molecular weight (MW) influences the thermoelectric properties of P3HT films. The films were doped with lithium bis(trifluoromethane sulfonyl) imide salt (LiTFSI) and 4-tert butylpyridine (TBP). Various P3HT layers with different MWs ranging from 21 to 94 kDa were investigated. UV–Vis spectroscopy and atomic force microscopy (AFM) analysis were performed to investigate the morphology and structure features of thin films with different MWs. The electrical conductivity initially increased when the MW increased and then decreased at the highest MW, whereas the Seebeck coefficient had a trend of reducing as the MW grew. The maximum thermoelectric power factor (1.87 μW/mK2) was obtained for MW of 77 kDa at 333 K. At this temperature, the electrical conductivity and Seebeck coefficient of this MW were 65.5 S/m and 169 μV/K, respectively.

scholarly journals An Active Absorbent for Cleanup of High-Concentration Strong Acid and Base Solutions

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3389
Author(s):  
Nara Han ◽  
Sol Park ◽  
Byung Kwon Kaang ◽  
Wooree Jang ◽  
Hye Young Koo ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Strong Acid ◽  
Absorption Capacity ◽  
Dust Particles ◽  
High Concentration ◽  
Strong Base ◽  
Base Solution ◽  
Acid And Base ◽  
Drop Tests ◽  
High Absorption

There is significant interest in developing novel absorbents for hazardous material cleanup. Iron oxide-coated melamine formaldehyde sponge (MFS/IO) absorbents with various IO layer thicknesses were synthesized. Various other absorbents were also synthesized and compared to evaluate the absorption capability of the MFS/IO absorbents for strong acid (15%, v/v) and base (50%, m/m) solutions. Specifically, absorbent and solution drop tests, dust tests, and droplet fragment tests were performed. Among the various absorbents, MFS/IO absorbents possessing a needlelike surface morphology showed several unique characteristics not observed in other absorbents. The MFS/IO absorbents naturally absorbed a strong base solution (absorption time: 0.71–0.5 s, absorption capacity: 10,000–34,000%) without an additional external force and immediately absorbed a strong acid solution (0.31–0.43 s, 9830–10,810%) without absorption delay/overflow during absorbent and solution drop tests, respectively. The MFS/IO absorbents were also demonstrated to be ideal absorbents that generated fewer dust particles (semiclass 1 (ISO 3) level of 280 piece/L) than the level of a clean room (class 100). Furthermore, the MFS/IO absorbents were able to prevent the formation of droplet fragments and solution overflow during the solution drop test due to their unique surface morphology and extremely high absorption speed/capacity, respectively.

Effect of the Annealing on the Low-Temperature Charge Transport Properties of Heavily Boron-Doped Nanocrystalline Silicon Films for Thermoelectric Applications

2016 ◽  
Vol 3 (4) ◽  
Author(s):  
Laura Zulian ◽  
Francesco Segrado ◽  
Dario Narducci
Keyword(s):  
Low Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Power Factor ◽  
High Doping Level ◽  
Boron Doped ◽  
Nanocrystalline Silicon Films

Abstract Silicon is the reference material of microelectronics, is readily available, relatively unexpensive, and its use may take profit of a fantastic technology. This may explain why a substantial effort has focused on improving its thermoelectric efficiency, either by top-down nanostructuring or through suitable processing. In this paper we report an analysis of the electronic transport properties of heavily boron-doped nanocrystalline silicon films. High-temperature thermal treatments are confirmed to remarkably increase its thermoelectric power factor. Electrical conductivity and Hall effect measurements were carried out over the temperature range 20–300 K along with Seebeck coefficient measurements. We provide evidence of the occurrence of low-temperature hopping conduction between impurity subbands. Dopant ionization was studied as a function of temperature. Freeze-out temperature was found to correlate with the Seebeck coefficient in agreement with Pisarenko equation. This brings to the conclusion that, while untreated samples are weakly degenerate, the thermal processing reverts them into non-degenerate semiconductors, in spite of the high doping level.

scholarly journals Influence of surface morphology on electrophysical properties of PbTe: Sb films

2021 ◽  
Vol 22 (3) ◽  
pp. 415-419
Author(s):  
Ya.P. Saliy ◽  
L.I. Nykyruy
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Seebeck Coefficient ◽  
Carrier Mobility ◽  
Structural Parameters ◽  
Electrophysical Properties ◽  
Ceramic Substrates ◽  
Semiconductor Thin Films ◽  
Film Boundary ◽  
Substrate Film

The electrophysical properties of polycrystalline doped semiconductor thin films PbTe: Sb deposited on mica and sital (glass based ceramic) substrates are considered. The thickness dependencies of carrier mobility, of Hall coefficient and of Seebeck coefficient, and the correlations between these parameters for films deposited on different substrate materials were studied. The peculiarities of growth of thin films and their structural parameters are analyzed taking into account the features of the ‘substrate – film’ boundary section.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Carrier dilution in TiSe2 based intergrowth compounds for enhanced thermoelectric performance

2015 ◽  
Vol 3 (40) ◽  
pp. 10451-10458 ◽  
Author(s):  
S. R. Bauers ◽  
D. R. Merrill ◽  
D. B. Moore ◽  
D. C. Johnson
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Performance ◽  
Thermoelectric Power Factor

Synthesis and electrical properties of kinetically stabilized (PbSe)1+δ(TiSe2)n thin-film intergrowths are reported for 1 ≤ n ≤ 18. The carriers donated to the TiSe2 from PbSe are diluted with increasing n, leading to a systematic increase in the Seebeck coefficient and thermoelectric power factor.

Cu-induced Seebeck peak in HMS/Si film

2014 ◽  
Vol 28 (22) ◽  
pp. 1450176 ◽  
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Bulk Material ◽  
Energy Levels ◽  
Thermoelectric Power Factor ◽  
Silicide Layer ◽  
Manganese Silicide ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Peak Value

It is well known that aluminum ( Al ), boron ( B ) and copper ( Cu ) are acceptor impurities with shallow- and deep-energy levels in silicon ( Si ), respectively. Thus, Al and B impurities with shallow-energy levels in Si are essentially completely ionized at room temperature while Cu impurities with deep-energy levels in Si at higher temperature. In this paper, Al , B and Cu co-doped Si layer is used as a barrier layer while the higher manganese silicide layer (HMS) as a well layer. The Seebeck coefficient (S) of Al and Cu modulation doped film, HMS/ Si :( Al + Cu ), increases sharply above 583 K, reaches a peak value of 0.300 mV/K at 683 K, and then decreases with further increasing temperature. Concomitance with the great increase in Seebeck coefficient, however, the electrical resistivity (R) is still smaller than that of only Al modulation doped film, HMS/ Si : Al . The Cu -induced Seebeck peak, S max = 0.303 mV/K at 733 K, and reduction in electrical resistivity are also observed in ( B + Al + Cu ) modulation doped film, Si :( B + Al + Cu )/HMS/ Si :( B + Al + Cu ), where B is used to reduce the electrical resistivity further. As a result, the thermoelectric power factor (PF = S2/R) is greatly enhanced and can reach 3.140 × 10-3 W/m-K2 at 733 K, which is larger than that of HMS bulk material.

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