Effect of A-Site Ion Excess on (K, Na)NbO3 Thin Film Fabricated by Sol–Gel Non-alkoxide Process

2015 ◽  
Vol 0 (0) ◽  
Author(s):  
Lin-Lin Yao ◽  
Li-Xia Ji ◽  
Kong-Jun Zhu ◽  
Jing Wang ◽  
Jing-Song Liu ◽  
...  
Keyword(s):  
Sol Gel ◽  

AbstractLead-free (K, Na)NbO

ENERGYO ◽  
2018 ◽  
Author(s):  
Lin-Lin Yao ◽  
Li-Xia Ji ◽  
Kong-Jun Zhu ◽  
Jing Wang ◽  
Jing-Song Liu ◽  
...  
Keyword(s):  
Sol Gel ◽  

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3563-3566 ◽  
Author(s):  
T. Yu ◽  
K.W. Kwok ◽  
H.L.W. Chan

2011 ◽  
Vol 287-290 ◽  
pp. 2318-2321
Author(s):  
Shu Lan Guo ◽  
Jia Li ◽  
Xue Dong Xu

Ferroelectric thin films Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 of A-site substitution of Bi4Ti3O12 were fabricated by sol-gel method in the paper. X-ray diffraction pattern shows the prepared thin films exhibit a highly random orientation with predominantly (117) and (00l) orientation. Pr values of Bi3.25La0.75Ti3O12 、Bi3.15Nd0.85Ti3O12 and Bi3.15(La0.5Nd0.5)0.85Ti3O12 thin films were respectively 13.14μC/cm2, 20.65μC/cm2 and 21.23μC/cm2 at the voltage of 10V.FE-SEM shows that the BNT thin film has a dense and homogeneous microstructure without any crack. The BNT thin film thickness is about 300nm.


2005 ◽  
Vol 33 (3) ◽  
pp. 307-314 ◽  
Author(s):  
Chang-Yeoul Kim ◽  
Tohru Sekino ◽  
Yo Yamamoto ◽  
Koichi Niihara

2018 ◽  
Vol 5 (9) ◽  
pp. 2300-2305 ◽  
Author(s):  
Pan Chen ◽  
Shuanghao Wu ◽  
Peng Li ◽  
Jiwei Zhai ◽  
Bo Shen

Lead-free 0.94(Bi0.5Na0.5)0.94TiO3-0.06BaTiO3/BiFeO3 (abbreviated as BNBT/xBFO) multilayer thin film hetero-structures were deposited on Pt(111)/Ti/SiO2/Si substrates using a sol–gel/spin coating method.


1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


Author(s):  
Dong XU ◽  
Qi SONG ◽  
Ke ZHANG ◽  
Hong-Xing XU ◽  
Yong-Tao YANG ◽  
...  
Keyword(s):  
Sol Gel ◽  

2018 ◽  
Vol 15 (2) ◽  
pp. 188-196 ◽  
Author(s):  
Chengpeng Xu ◽  
Shengying Ye ◽  
Xiaolei Cui ◽  
Quan Zhang ◽  
Yan Liang

Background: Improper storage and raw materials make peanut oil susceptible to Aflatoxin B1 (AFB1). The semiconductor TiO2 photocatalysis technology is an effective technology which is widely used in sewage treatment, environmental protection and so on. Moreover, the photocatalytic efficiency can be improved by doping I. Method: The experiment is divided into two parts. In the first part, supported TiO2 thin film (STF) was prepared on the quartz glass tube (QGT) by the sol-gel and calcination method and the supported iodine doped supported TiO2 thin film (I-STF) was synthesized using potassium iodate solution. In the second part, the photocatalytic degradation of AFB1 was performed in a self-made photocatalytic reactor. The AFB1 was detected by ELISA kit. Results: The photocatalytic degradation of AFB1 has been proven to follow pseudo first-order reaction kinetics well (R2 > 0.95). The maximum degradation rate of 81.96%, which was reached at the optimum iodine concentration of 0.1mol/L, was 11.38% higher than that with undoped STF. The doping of iodine reduces the band-gap of TiO2, thereby increasing the photocatalytic response range. The proportion of Ti4+ in I-STF has decreased, which means that Ti4+ are replaced by I. The I-STF prepared at iodine concentration of 0.1mol/L has good photocatalytic properties.


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