scholarly journals III-V Tandem, CuInGa(S,Se)2, and Cu2ZnSn(S,Se)4 Compound Semiconductor Thin Film Solar Cells

2015 ◽  
Vol 26 (5) ◽  
pp. 526-532
Author(s):  
Yonkil Jeong ◽  
Dong-Won Park ◽  
Jae Kwang Lee ◽  
Jaeyoung Lee
Author(s):  
Rabin Dhakal ◽  
Joshua Kofford ◽  
Brian Logue ◽  
Michael Ropp ◽  
David Galipeau ◽  
...  

Author(s):  
Michael G. Mauk

The prospects for cost-effective flat plate (non-concentrator) solar cells based on III-V compound semiconductors (e.g., GaAs, InP, AlAs, and their alloys) are reviewed. Solar cells made in III-V materials are expensive, but outperform solar cells in every other materials system. The relatively high cost of compound semiconductor wafers necessitates a means to eliminate their use as substrates for epitaial growth of conventional III-V solar cells. There are several approaches to this end, including thin-film solar cells on low-cost, dissimilar substrates such as glass, ceramics, and metal sheets; III-V solar cells epitaxially grown on silicon wafers; film transfer (‘epitaxial lift off’) techniques that allow re-use of the seeding substrate; and assembled arrays of small III-V solar cells on low-cost substrates. Grain boundary effects in polycrystalline III-V films can severely degrade solar cell performance, and impede the application of established thin-film technologies, as developed for amorphous silicon and II-VI semiconductor photovoltaics, to III-V semiconductor-based solar cells. The nearly fifty years of effort in developing thin-film III-V solar cells has underscored the difficulty of achieving large-grain sizes and/or low recombination grain boundaries in polycrystalline films of III-V semiconductors.


2019 ◽  
Author(s):  
Stefan Zeiske ◽  
Oskar Sandberg ◽  
Nasim Zarrabi ◽  
Paul Meredith ◽  
Ardalan Armin

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