scholarly journals Methods for Calculating Activation Energy for Portland Cement

2007 ◽  
Vol 104 (1) ◽  
Keyword(s):  
Activation Energy ◽  
Portland Cement

Nanoparticles and Apparent Activation Energy of Portland Cement

2014 ◽  
Vol 97 (5) ◽  
pp. 1534-1542 ◽  
Author(s):  
Amal R. Jayapalan ◽  
Melinda L. Jue ◽  
Kimberly E. Kurtis
Keyword(s):  
Activation Energy ◽  
Portland Cement ◽  
Apparent Activation Energy

scholarly journals Thermal Properties of Calcium Sulphoaluminate Cement as an Alternative to Ordinary Portland Cement

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 7011
Author(s):  
Małgorzata Gołaszewska ◽  
Barbara Klemczak ◽  
Jacek Gołaszewski
Keyword(s):  
Activation Energy ◽  
Portland Cement ◽  
Apparent Activation Energy ◽  
Thermal Behaviour ◽  
Ordinary Portland Cement ◽  
Isothermal Calorimetry ◽  
Heat Of Hydration ◽  
Curing Temperature ◽  
Cement Pastes ◽  
Calcium Sulphoaluminate

This paper presents the results of research into the heat of hydration and activation energy of calcium sulphoaluminate (CSA) cement in terms of the dependence on curing temperature and water/cement ratio. Cement pastes with water/cement ratios in the range of 0.3–0.6 were tested by isothermal calorimetry at 20 °C, 35 °C and 50 °C, with the evolved hydration heat and its rate monitored for 168 h from mixing water with cement. Reference pastes with ordinary Portland cement (OPC) were also tested in the same range. The apparent activation energy of CSA and OPC was determined based on the results of the measurements. CSA pastes exhibited complex thermal behaviour that differed significantly from the thermal behaviour of ordinary Portland cement. The results show that both the w/c ratio and elevated temperature have a meaningful effect on the heat emission and the hydration process of CSA cement pastes. The determined apparent activation energy of CSA revealed its substantial variability and dependence, both on the w/c ratio and the curing temperature.

scholarly journals Influence of organosilicon admixtures on the hydration of Portland cement

2021 ◽  
Author(s):  
Kalina Grabowska ◽  
Marcin Koniorczyk
Keyword(s):  
Activation Energy ◽  
Portland Cement ◽  
Cement Hydration ◽  
Isothermal Calorimetry ◽  
Reference Sample ◽  
Bound Water ◽  
Cement Matrix ◽  
Tg Analysis ◽  
The Impact ◽  
Portland Cement Hydration

AbstractThe impact of three different organosilicon compounds: poly(dimethylsiloxane) (PDMS), potassium methylsiliconate (MESI) and triethoxyoctylsilane (OTES), used as integral admixtures, on Portland cement hydration has been investigated by isothermal calorimetry and DTA-TG analysis. The silicon-based compounds are widely used as internal hydrophobic agents added into batch water; therefore, their effectiveness was investigated by means of capillary water absorption test. The isothermal calorimetry was used to measure the rate and amount of heat released during ordinary Portland cement hydration with integral organosilicon admixtures at 20 °C, 30 °C, 40 °C and 50 °C. It allowed to determine the activation energy as well. The results indicate that used admixtures (except MESI admixture) decrease in the rate and amount of heat release during cement hydration. In addition, it is noticeable that the addition of MESI admixture significantly prolongs the induction period and delays hydration. In contrast to MESI and OTES admixtures, PDMS-based admixture does not affect significant on the activation energy. DTA-TG analysis had shown differences between reference sample and samples containing organosilicon admixtures during thermal decomposition, in terms of the amount of moisture and bound water, as well as Ca(OH)2 or carbonates. The results presented in this paper enable a better understanding of the interactions between the organosilicon integral admixtures and the cement matrix. The study shows the effect of integral admixtures on cement hydration and thus the potential effect on the final properties of the cement-based material.

The Portland Cement Industry of the World

1898 ◽  
Vol 46 (1192supp) ◽  
pp. 19108-19109
Author(s):  
Bernard L. Green
Keyword(s):  
Portland Cement ◽  
Cement Industry ◽  
The World

Development of a Capacitor Probe to Detect Subsurface Deterioration in Concrete

1997 ◽  
Vol 503 ◽  
Author(s):  
B. K. Diefenderfer ◽  
I. L. Al-Qadi ◽  
J. J. Yoho ◽  
S. M. Riad ◽  
A. Loulizi
Keyword(s):  
Dielectric Constant ◽  
Portland Cement ◽  
Electromagnetic Waves ◽  
Low Cost ◽  
Complex Dielectric Constant ◽  
Life Cycle Costs ◽  
Parallel Plates ◽  
Portland Cement Concrete ◽  
Cement Concrete ◽  
Set Up

ABSTRACTPortland cement concrete (PCC) structures deteriorate with age and need to be maintained or replaced. Early detection of deterioration in PCC (e.g., alkali-silica reaction, freeze/thaw damage, or chloride presence) can lead to significant reductions in maintenance costs. However, it is often too late to perform low-cost preventative maintenance by the time deterioration becomes evident. By developing techniques that would enable civil engineers to evaluate PCC structures and detect deterioration at early stages (without causing further damage), optimization of life-cycle costs of the constructed facility and minimization of disturbance to the facility users can be achieved.Nondestructive evaluation (NDE) methods are potentially one of the most useful techniques ever developed for assessing constructed facilities. They are noninvasive and can be performed rapidly. Portland cement concrete can be nondestructively evaluated by electrically characterizing its complex dielectric constant. The real part of the dielectric constant depicts the velocity of electromagnetic waves in PCC. The imaginary part, termed the “loss factor,” describes the conductivity of PCC and the attenuation of electromagnetic waves.Dielectric properties of PCC have been investigated in a laboratory setting using a parallel plate capacitor operating in the frequency range of 0.1 to 40.1MIHz. This capacitor set-up consists of two horizontal-parallel plates with an adjustable separation for insertion of a dielectric specimen (PCC). While useful in research, this approach is not practical for field implementation. A new capacitor probe has been developed which consists of two plates, located within the same horizontal plane, for placement upon the specimen to be tested. Preliminary results show that this technique is feasible and results are promising; further testing and evaluation is currently underway.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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