scholarly journals Characterization of Al-doped ZnO thin films by laboratory-based hard X-ray photoelectron spectroscopy system

2019 ◽  
Vol 26 (2) ◽  
pp. 214-215
Author(s):  
Ishiki Takeda ◽  
Hisao Makino
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
X Ray ◽  
Doped Zno ◽  
Spectroscopy System

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

X-ray absorption fine structure and magnetization characterization of the metallic Co component in Co-doped ZnO thin films

2009 ◽  
Vol 79 (7) ◽  
Author(s):  
Steve M. Heald ◽  
Tiffany Kaspar ◽  
Tim Droubay ◽  
V. Shutthanandan ◽  
Scott Chambers ◽  
...  
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
Zno Thin Films ◽  
X Ray ◽  
Absorption Fine ◽  
Doped Zno ◽  
X Ray Absorption ◽  
Co Doped

Structure, X-ray photoelectron spectroscopy and photoluminescence investigations of the spray deposited cobalt doped ZnO thin films

2014 ◽  
Vol 106 ◽  
pp. 26-32 ◽  
Author(s):  
N.L. Tarwal ◽  
K.V. Gurav ◽  
T. Prem Kumar ◽  
Y.K. Jeong ◽  
H.S. Shim ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
X Ray ◽  
Doped Zno

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

2021 ◽  
Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mg Doped

Characterization of ZnO and Al doped ZnO thin films prepared by SILAR method

2020 ◽  
Author(s):  
Irine Linson ◽  
Sreedev Padmanabhan ◽  
Rakhesh Vamadevan ◽  
Roshima Narayanankutty Sujatha ◽  
Balakrishnan Shankar
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Silar Method ◽  
Doped Zno
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