scholarly journals Quantitative EPMA analysis - Monte Carlo simulation usage in its analysis with high accuracy -

2013 ◽  
Vol 20 (2) ◽  
pp. 111-123
Author(s):  
Mitsuaki Nishio
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Accuracy ◽  
Its Analysis ◽  
Epma Analysis ◽  
Quantitative Epma

scholarly journals Superfluid Transition and Specific Heat of the 2D x-y Model: Monte Carlo Simulation

2021 ◽  
Vol 11 (11) ◽  
pp. 4931
Author(s):  
Phong H. Nguyen ◽  
Massimo Boninsegni
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Transition Temperature ◽  
Specific Heat ◽  
Large Scale ◽  
High Accuracy ◽  
Superfluid Transition ◽  
Square Lattice ◽  
Superfluid Fraction

We present results of large-scale Monte Carlo simulations of the 2D classical x-y model on the square lattice. We obtain high accuracy results for the superfluid fraction and for the specific heat as a function of temperature, for systems of size L×L with L up to 212. Our estimate for the superfluid transition temperature is consistent with those furnished in all previous studies. The specific heat displays a well-defined peak, whose shape and position are independent of the size of the lattice for L>28, within the statistical uncertainties of our calculations. The implications of these results on the interpretation of experiments on adsorbed thin films of 4He are discussed.

Supplied Demand Technique for Power System Balance Reliability Calculations

2014 ◽  
Vol 960-961 ◽  
pp. 1512-1515 ◽  
Author(s):  
Vladislav Petrovich Oboskalov ◽  
Irina Lvovna Kirpikova ◽  
Stanislava Matugova ◽  
Sergey Aleksandrovich Gusev
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Analytical Solution ◽  
Power System ◽  
Probability Density ◽  
High Accuracy ◽  
Probability Density Functions ◽  
Density Functions ◽  
Power Imbalance

This paper presents an iterative power system balance reliability calculating technique ensuring better convergence and faster calculations. The technique is called "supplied demand". Nodal power imbalance is considered as the primary stochastic value under analysis. An analytical solution does not contain probability density functions. It results in faster calculations. Results were verified by Monte Carlo Simulation and showed high accuracy of the technique.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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