scholarly journals Fabrication and Characterization of Polystyrene Surface with Atomic-Scale Surface Roughness

2012 ◽  
Vol 10 (0) ◽  
pp. 591-593
Author(s):  
Katsumi Shimizu ◽  
Syoushi Higuchi ◽  
Amane Kitahara ◽  
Hikaru Terauchi ◽  
Isao Takahashi
Keyword(s):  
Surface Roughness ◽  
Atomic Scale ◽  
Polystyrene Surface ◽  
Fabrication And Characterization ◽  
Scale Surface

scholarly journals Fabrication and Characterization of Single-Crystal Diamond Membranes for Quantum Photonics with Tunable Microcavities

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1080
Author(s):  
Julia Heupel ◽  
Maximilian Pallmann ◽  
Jonathan Körber ◽  
Rolf Merz ◽  
Michael Kopnarski ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Membrane Thickness ◽  
Initial Surface ◽  
Crucial Component ◽  
Single Crystal Diamond ◽  
Fabrication And Characterization ◽  
Etching Parameters ◽  
Quantum Photonics

The development of quantum technologies is one of the big challenges in modern research. A crucial component for many applications is an efficient, coherent spin–photon interface, and coupling single-color centers in thin diamond membranes to a microcavity is a promising approach. To structure such micrometer thin single-crystal diamond (SCD) membranes with a good quality, it is important to minimize defects originating from polishing or etching procedures. Here, we report on the fabrication of SCD membranes, with various diameters, exhibiting a low surface roughness down to 0.4 nm on a small area scale, by etching through a diamond bulk mask with angled holes. A significant reduction in pits induced by micromasking and polishing damages was accomplished by the application of alternating Ar/Cl2 + O2 dry etching steps. By a variation of etching parameters regarding the Ar/Cl2 step, an enhanced planarization of the surface was obtained, in particular, for surfaces with a higher initial surface roughness of several nanometers. Furthermore, we present the successful bonding of an SCD membrane via van der Waals forces on a cavity mirror and perform finesse measurements which yielded values between 500 and 5000, depending on the position and hence on the membrane thickness. Our results are promising for, e.g., an efficient spin–photon interface.

Effect of atomic-scale surface roughness on friction: A molecular dynamics study of diamond surfaces

Wear ◽  
1993 ◽  
Vol 168 (1-2) ◽  
pp. 127-133 ◽  
Author(s):  
Judith A. Harrison ◽  
Richard J. Colton ◽  
Carter T. White ◽  
Donald W. Brenner
Keyword(s):  
Molecular Dynamics ◽  
Surface Roughness ◽  
Atomic Scale ◽  
Diamond Surfaces ◽  
Scale Surface

Effect of Atomic-Scale Roughness on Contact Behavior

2011 ◽  
Vol 86 ◽  
pp. 584-589
Author(s):  
Fang Li Duan ◽  
He Bing Qiu ◽  
Ji Ming Yang ◽  
Cong Ying Wu
Keyword(s):  
Surface Roughness ◽  
Large Scale ◽  
Atomic Scale ◽  
Real Contact Area ◽  
Hertz Model ◽  
Contact Behavior ◽  
Flat Substrate ◽  
Dynamics Simulations ◽  
Scale Roughness ◽  
Scale Surface

Large-scale molecular dynamics simulations are performed to study the effect of atomic-scale surface roughness on nano-contact. The modeling system consists of rigid spherical tips with different surface roughness and elastic flat substrate. Our results show that atomic-scale multi-asperity can change the contact behavior from consistent with the Hertz model to the Persson model. However, adhesion will reduce the influence of surface roughness, to the extent that the two tips with different roughness show similar variations of real contact area with applied load. The maximum compression and tensile stress of the rough tip is about 2 times and 1.5 times that of the smooth one, respectively. Moreover, the rough tip exhibits larger repulsive force and attractive force in the entire range of simulated load. Our simulations suggest that pull-off force cannot characterize the extent of the influence of adhesion on contact behavior at the nanoscale.

Electrochemical Fabrication and Characterization of Iron Quantum Wire

2012 ◽  
Vol 548 ◽  
pp. 147-150
Author(s):  
Xiao Dong Dong ◽  
Jun Hua Liu ◽  
Yong Xia
Keyword(s):  
Molecular Electronics ◽  
Quantum Wire ◽  
Electrochemical Method ◽  
Deposition Process ◽  
Atomic Scale ◽  
Controlled System ◽  
Ohmic Behavior ◽  
Fabrication And Characterization ◽  
Electrochemical Fabrication

Stable iron quantum wire with atomic-scale was successfully fabricated and electrically characterized with an electrochemical method in solution by a home-made electrochemically controlled system. By careful controlling the etching/deposition process, stepwise conductance behavior could be clearly observed. The I-V curve of the formed iron quantum wire showed the ohmic behavior with low bias voltage. The work is of great significance for molecular electronics, interface electrochemistry and sensing.

Surface Morphology of Ultrathin Oxide Formed on Si(100)

1999 ◽  
Vol 567 ◽  
Author(s):  
T. Hattori ◽  
M. Fujimura ◽  
H. Nohira
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Atomic Scale ◽  
Oxide Surface ◽  
Atomic Step ◽  
Oxide Film Thickness ◽  
Induced Stress ◽  
Ultrathin Oxide ◽  
Scale Surface

ABSTRACTThe atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation–induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.

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