scholarly journals Local electronic structure analysis using a photoelectron emission microscope (PEEM) with hard X-ray

2006 ◽  
Vol 4 ◽  
pp. 490-493 ◽  
Author(s):  
M. Kotsugi ◽  
T. Wakita ◽  
T. Taniuchi ◽  
K. Ono ◽  
M. Suzuki ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Structure Analysis ◽  
Photoelectron Emission ◽  
X Ray ◽  
Local Electronic Structure ◽  
Photoelectron Emission Microscope

Local electronic structure analysis of Zn-doped BiFeO3 powders by X-ray absorption fine structure spectroscopy

2017 ◽  
Vol 710 ◽  
pp. 843-849 ◽  
Author(s):  
Turghunjan Gholam ◽  
Abduleziz Ablat ◽  
Mamatrishat Mamat ◽  
Rong Wu ◽  
Aimierding Aimidula ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fine Structure ◽  
Structure Analysis ◽  
X Ray ◽  
Absorption Fine ◽  
Local Electronic Structure ◽  
X Ray Absorption

The local electronic structure of tin phthalocyanine studied by resonant soft X-ray emission spectroscopies

2008 ◽  
Vol 255 (3) ◽  
pp. 764-766 ◽  
Author(s):  
N. Peltekis ◽  
B.N. Holland ◽  
L.F.J. Piper ◽  
A. DeMasi ◽  
K.E. Smith ◽  
...  
Keyword(s):  
Electronic Structure ◽  
X Ray ◽  
Local Electronic Structure

X-ray photoelectron, emission, and absorption studies of the electronic structure of molybdenum and tungsten trisulfides and their intercalates

1994 ◽  
Vol 35 (6) ◽  
pp. 823-833 ◽  
Author(s):  
G. F. Khudorozhko ◽  
I. P. Asanov ◽  
L. N. Mazalov ◽  
É. A. Kravtsova ◽  
G. K. Parygina ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoelectron Emission ◽  
X Ray ◽  
Absorption Studies ◽  
And Tungsten

scholarly journals Electronic structure analysis of UIr using soft x-ray photoemission spectroscopy and band calculation

2010 ◽  
Vol 200 (1) ◽  
pp. 012229 ◽  
Author(s):  
H Yamagami ◽  
T Ohkochi ◽  
S-i Fujimori ◽  
T Toshimitsu ◽  
A Yasui ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Structure Analysis ◽  
Photoemission Spectroscopy ◽  
Band Calculation ◽  
X Ray

Local electronic structure of ZnS and ZnSe doped by Mn, Fe, Co, and Ni from x-ray-absorption near-edge structure studies

1996 ◽  
Vol 53 (3) ◽  
pp. 1119-1128 ◽  
Author(s):  
K. L/awniczak-Jabl/onska ◽  
R. J. Iwanowski ◽  
Z. Gol/acki ◽  
A. Traverse ◽  
S. Pizzini ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Edge Structure ◽  
X Ray ◽  
Local Electronic Structure ◽  
X Ray Absorption

LOCAL ELECTRONIC STRUCTURE OF N ATOMS IN Ga(In)AsN BY SOFT-X-RAY ABSORPTION AND EMISSION: OPTICAL EFFICIENCY

2004 ◽  
Vol 03 (01n02) ◽  
pp. 95-103
Author(s):  
V. N. STROCOV ◽  
P. O. NILSSON ◽  
T. SCHMITT ◽  
R. CLAESSEN ◽  
A. Yu, EGOROV ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band Maximum ◽  
Optical Efficiency ◽  
X Ray ◽  
X Ray Scattering ◽  
Local Environments ◽  
Valence States ◽  
Random Alloy ◽  
Local Electronic Structure ◽  
Recombination Centers

The local electronic structure of N atoms in Ga ( In ) AsN diluted alloys ( N concentration of 3%) is determined by soft-X-ray emission and absorption spectroscopies as element specific probes. The experimental spectra reflect the local 2p orbital-projected density-of-states of N impurities, the main recombination centers in Ga ( In ) AsN , which appears to deviate dramatically from crystalline GaN in both valence and conduction bands. In particular, we observe a N local charge transfer from the valence band maximum to deeper valence states, which fundamentally limits the optical efficiency of Ga ( In ) AsN , unless different N local environments are formed. The incorporation of In in large concentrations forms In -rich N local environments such as In 4 N , which become the main recombination centers in Ga ( In ) AsN due to a local decrease of the band gap. A k-conserving process of resonant inelastic X-ray scattering is discovered, which allows probing of the k-character of valence and conduction states despite the random alloy nature of Ga ( In ) AsN .

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