scholarly journals High-Rate Sputtering and Chemical Modification of Silicon Surfaces Irradiated by Alcohol Cluster Ion Beams

2006 ◽  
Vol 4 ◽  
pp. 473-477 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Hidetaka Noguchi ◽  
Kazuya Nakayama ◽  
Masakazu Kawashita
Keyword(s):  
Chemical Modification ◽  
Ion Beams ◽  
Silicon Surfaces ◽  
High Rate ◽  
Cluster Ion Beams ◽  
Cluster Ion

Irradiation effects of liquid cluster ion beams on silicon surfaces

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8628-8631 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Masakazu Kawashita ◽  
Hidetaka Noguchi ◽  
Kazuya Nakayama
Keyword(s):  
Ion Beams ◽  
Silicon Surfaces ◽  
Irradiation Effects ◽  
Cluster Ion Beams ◽  
Cluster Ion

High rate etching of GaAs and GaP by gas cluster ion beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Masahiro Nagano ◽  
Shingo Houzumi ◽  
Noriaki Toyoda ◽  
Susumu Yamada ◽  
Shirabe Akita ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
New Processing ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Sputtering Yields

ABSTRACTGas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.

High-speed Processing with Reactive Cluster Ion Beams

2004 ◽  
Vol 843 ◽  
Author(s):  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
High Speed ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ions ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Reactive Cluster

ABSTRACTCluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. Reactive cluster ion beams, such as SF6, CF4, CHF3, and CH2F2, were generated and their cluster size distributions were measured using Time-of-Flight (TOF) method. Si substrates were irradiated with the reactive cluster ions at the acceleration energy of 5–65 keV. Each sputtering yield was increased with acceleration energy and was about 1000 times higher than that of Ar monomer ions. The sputtering yield of SF6 cluster ions was about 4600 atoms/ion at 65 keV. With this beam, 12 inches wafers can be etched 0.5 μm per minute at 1 mA of beam current. The TOF measurement showed that the size of SF6 cluster was about 550 molecules and the number of fluorine atoms in a SF6 cluster was about 3300. If the sputtered product was SiF, the yield has to be less than 3300 atoms/ion. These results indicate that the reactive cluster ions etch targets not only chemically, but also physically. This high-speed processing with reactive cluster ion beam can be applied to fabricate nano-devices.

High-speed Processing with Cluster Ion Beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
High Speed ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ions ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Reactive Cluster

ABSTRACTCluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. High current SF6 cluster ion beams were recently obtained with new modifications in the basic cluster ion beam technique. The cluster size distribution was measured with Time-of-Flight (TOF) method and the mean size of cluster was about 500 molecules. Si substrates were irradiated with SF6 cluster ions at the acceleration energy of 5–45 keV. Sputtering yield with SF6 cluster ions was increased with acceleration energy and was about 2300 atoms/ion at 45 keV. The sputtering yield was about 1000 times higher than that of Ar monomer ions and was also higher than that of Ar cluster ions. It was found that reactive sputtering occurred with SF6 cluster ion irradiation. These results indicate that high-speed fabrication can be realized with reactive cluster ion irradiation at high energy.

Sign in / Sign up

Export Citation Format

Share Document