First-Principles Study of Field-Effect Doping in Nano-Scale Systems by the Enforced Fermi-Energy Difference Method

e-Journal of Surface Science and Nanotechnology ◽

10.1380/ejssnt.2005.453 ◽

2005 ◽

Vol 3 ◽

pp. 453-456 ◽

Cited By ~ 3

Author(s):

Kazuyuki Uchida ◽

Hiroyuki Kageshima ◽

Hiroshi Inokawa

Keyword(s):

Fermi Energy ◽

Difference Method ◽

First Principles ◽

Field Effect ◽

Energy Difference ◽

Nano Scale ◽

First Principles Study

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Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

Applied Physics Letters ◽

10.1063/1.4940685 ◽

2016 ◽

Vol 108 (4) ◽

pp. 043504 ◽

Cited By ~ 2

Author(s):

Anh Khoa Augustin Lu ◽

Geoffrey Pourtois ◽

Tarun Agarwal ◽

Aryan Afzalian ◽

Iuliana P. Radu ◽

...

Keyword(s):

Metal Oxide ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

First Principles Study

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First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0021912jss ◽

2019 ◽

Vol 8 (12) ◽

pp. M111-M117 ◽

Cited By ~ 5

Author(s):

Azam Samipour ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

First Principles Study ◽

Effect Transistor

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Electronic properties of a carbon nanotube in a field-effect transistor structure: A first-principles study

Physical Review B ◽

10.1103/physrevb.79.085402 ◽

2009 ◽

Vol 79 (8) ◽

Cited By ~ 6

Author(s):

Kazuyuki Uchida ◽

Susumu Okada

Keyword(s):

Carbon Nanotube ◽

Electronic Properties ◽

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

First Principles Study ◽

Effect Transistor

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First-principles study of Mn3 adsorbed on Au(111) and Cu(111) surfaces

RSC Advances ◽

10.1039/d1ra05714f ◽

2021 ◽

Vol 11 (49) ◽

pp. 31073-31083

Author(s):

E. E. Hernández-Vázquez ◽

S. López-Moreno ◽

F. Munoz ◽

J. L. Ricardo-Chavez ◽

J. L. Morán-López

Keyword(s):

Adsorption Energy ◽

First Principles ◽

Magnetic State ◽

Energy State ◽

Energy Difference ◽

First Principles Study ◽

State Configuration

Adsorption energy difference of Mn trimer on Au(111) and Cu(111) surfaces as a function of the magnetic state configuration. Where, the lowest energy state is the AFΔ one.

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First principles study of the electric field effect on magnetization and magnetic anisotropy of FeCo/MgO(001) thin film

Applied Physics Letters ◽

10.1063/1.3626598 ◽

2011 ◽

Vol 99 (7) ◽

pp. 072503 ◽

Cited By ~ 48

Author(s):

K. H. He ◽

J. S. Chen ◽

Y. P. Feng

Keyword(s):

Thin Film ◽

Electric Field ◽

Magnetic Anisotropy ◽

First Principles ◽

Field Effect ◽

Electric Field Effect ◽

First Principles Study

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Effects of Si/SiO2interface stress on the performance of ultra-thin-body field effect transistors: a first-principles study

Nanotechnology ◽

10.1088/1361-6528/aa9a69 ◽

2017 ◽

Vol 29 (2) ◽

pp. 025201 ◽

Cited By ~ 1

Author(s):

Hyo-Eun Jung ◽

Mincheol Shin

Keyword(s):

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body ◽

First Principles Study

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Junctionless Field Effect Diode (JL-FED): A First-Principles Study

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0151906jss ◽

2019 ◽

Vol 8 (6) ◽

pp. M60-M66 ◽

Cited By ~ 1

Author(s):

Mahdi Vadizadeh

Keyword(s):

First Principles ◽

Field Effect ◽

First Principles Study

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First principles study on transport characteristics of SiCNT-based field effect transistor

International Journal of Electronics Letters ◽

10.1080/21681724.2016.1216172 ◽

2016 ◽

Vol 5 (2) ◽

pp. 246-254 ◽

Cited By ~ 1

Author(s):

Sudhanshu Choudhary ◽

Abhishek Chauhan

Keyword(s):

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

First Principles Study ◽

Effect Transistor

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A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor

Journal of Applied Physics ◽

10.1063/1.4803032 ◽

2013 ◽

Vol 113 (16) ◽

pp. 163708 ◽

Cited By ~ 43

Author(s):

Seyed Mohammad Tabatabaei ◽

Maziar Noei ◽

Kaveh Khaliji ◽

Mahdi Pourfath ◽

Morteza Fathipour

Keyword(s):

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Biaxial Strain ◽

Monolayer Mos2 ◽

First Principles Study ◽

Effect Transistor

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Semiconducting α'−boron sheet with high mobility and low all-boron contact resistance: A first-principles study

Nanoscale ◽

10.1039/d1nr00329a ◽

2021 ◽

Author(s):

Jun-Jie Zhang ◽

Tariq Altalhi ◽

Jihui Yang ◽

Boris I Yakobson

Keyword(s):

Contact Resistance ◽

First Principles ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Two Dimensional ◽

First Principles Study ◽

Metallic Electrodes

Two-dimensional field effect transistors (2D FETs) with high mobility semiconducting channels and low contact resistance between the semiconducting channel and the metallic electrodes are highly sought components of future electronics....

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