Time-Resolved Surface Infrared Spectroscopy during Atomic Layer Deposition

2013 ◽  
Vol 67 (9) ◽  
pp. 1003-1012 ◽  
Author(s):  
Brent A. Sperling ◽  
John Hoang ◽  
William A. Kimes ◽  
James E. Maslar
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Time Resolved ◽  
Layer Deposition

Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water

2014 ◽  
Vol 32 (3) ◽  
pp. 031513 ◽  
Author(s):  
Brent A. Sperling ◽  
John Hoang ◽  
William A. Kimes ◽  
James E. Maslar ◽  
Kristen L. Steffens ◽  
...  
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Time Resolved ◽  
Layer Deposition

Surface species during ALD of platinum observed with in situ reflection IR spectroscopy

2018 ◽  
Vol 20 (39) ◽  
pp. 25343-25356 ◽  
Author(s):  
Michiel Van Daele ◽  
Christophe Detavernier ◽  
Jolien Dendooven
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Ir Spectroscopy ◽  
Atomic Layer Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Atomic Layer ◽  
Surface Species ◽  
Layer Deposition ◽  
Substrate Temperatures

Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the precursor and O2 gas or O2 plasma as the reactant, are studied with in situ reflection Fourier transform infrared spectroscopy (FTIR) at different substrate temperatures.

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

scholarly journals Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy

2008 ◽  
Vol 92 (23) ◽  
pp. 231904 ◽  
Author(s):  
E. Langereis ◽  
J. Keijmel ◽  
M. C. M. van de Sanden ◽  
W. M. M. Kessels
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Atomic Layer ◽  
Layer Deposition
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