Chemical Vapour Deposition and Atomic Layer Deposition: Metals for Optical Fibres

2013 ◽  
Author(s):  
S. T. Barry ◽  
M. B. E. Griffiths ◽  
D. J. Mandia ◽  
J. P. Coyle ◽  
P. G. Gordon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Optical Fibres ◽  
Layer Deposition

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

scholarly journals Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

2020 ◽  
Author(s):  
Matthew Griffiths ◽  
Zachary Dubrawski ◽  
Peter Gordon ◽  
Marcel Junige ◽  
Sean Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Figure Of Merit ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Thermal Characteristics ◽  
Atomic Layer ◽  
Figures Of Merit ◽  
Layer Deposition

A survey of known gold-containing chemical vapour deposition (CVD) and atomic layer deposition (ALD) precursors, with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed to easily assess the thermal characteristics.

scholarly journals Thermal Ranges and Figures of Merit for Gold-Containing Precursors For ALD

2020 ◽  
Author(s):  
Matthew Griffiths ◽  
Zachary Dubrawski ◽  
Peter Gordon ◽  
Marcel Junige ◽  
Sean Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Figure Of Merit ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Thermal Characteristics ◽  
Atomic Layer ◽  
Figures Of Merit ◽  
Layer Deposition

A survey of known gold-containing chemical vapour deposition (CVD) and atomic layer deposition (ALD) precursors, with a focus on collecting their volatilization and decomposition data. These data were applied to a figure of merit (σ) developed to easily assess the thermal characteristics.

Recent Advances Using Guanidinate Ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) Applications

2014 ◽  
Vol 67 (7) ◽  
pp. 989 ◽  
Author(s):  
Agnieszka Kurek ◽  
Peter G. Gordon ◽  
Sarah Karle ◽  
Anjana Devi ◽  
Seán T. Barry
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Pure Metal ◽  
Specific Substrate ◽  
The Past ◽  
Layer Deposition

Volatile metal complexes are important for chemical vapour deposition (CVD) and atomic layer deposition (ALD) to deliver metal components to growing thin films. Compounds that are thermally stable enough to volatilize but that can also react with a specific substrate are uncommon and remain unknown for many metal centres. Guanidinate ligands, as discussed in this review, have proven their utility for CVD and ALD precursors for a broad range of metal centres. Guanidinate complexes have been used to deposit metal oxides, metal nitrides and pure metal films by tuning process parameters. Our review highlights use of guanidinate ligands for CVD and ALD of thin films over the past five years, design trends for precursors, promising precursor candidates and discusses the future outlook of these ligands.

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