scholarly journals High nonlinear figure of merit hydrogenated amorphous silicon optical fibers

2013 ◽  
Author(s):  
L. Shen ◽  
N. Healy ◽  
P. Mehta ◽  
T. D. Day ◽  
J. V. Badding ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Fibers ◽  
Figure Of Merit ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

scholarly journals Nonlinear transmission properties of hydrogenated amorphous silicon core optical fibers

2010 ◽  
Vol 18 (16) ◽  
pp. 16826 ◽  
Author(s):  
P. Mehta ◽  
N. Healy ◽  
N. F. Baril ◽  
P. J. A. Sazio ◽  
J. V. Badding ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Fibers ◽  
Hydrogenated Amorphous Silicon ◽  
Nonlinear Transmission ◽  
Transmission Properties ◽  
Hydrogenated Amorphous

scholarly journals Photochemical Upconversion Enhanced Solar Cells: Effect of a Back Reflector

2012 ◽  
Vol 65 (5) ◽  
pp. 480 ◽  
Author(s):  
Tim F. Schulze ◽  
Yuen Yap Cheng ◽  
Burkhard Fückel ◽  
Rowan W. MacQueen ◽  
Andrew Danos ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Figure Of Merit ◽  
Silicon Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Scattering Layer ◽  
Amorphous Silicon Solar Cell ◽  
Back Scattering ◽  
Back Reflector ◽  
Hydrogenated Amorphous

Photochemical upconversion is applied to a hydrogenated amorphous silicon solar cell in the presence of a back-scattering layer. A custom-synthesized porphyrin was utilized as the sensitizer species, with rubrene as the emitter. Under a bias of 24 suns, a peak external quantum efficiency (EQE) enhancement of ~2 % was observed at a wavelength of 720 nm. Without the scattering layer, the EQE enhancement was half this value, indicating that the effect of the back-scatterer is to double the efficacy of the upconverting device. The results represent an upconversion figure of merit of 3.5 × 10–4 mA cm–2 sun–2, which is the highest reported to date.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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