Generation and Amplification of 400 nm band Picosecond Optical Pulses by GaInN Laser Diodes

Author(s):  
Rintaro Koda ◽  
Tomoyuki Oki ◽  
Takao Miyajima ◽  
Hideki Watanabe ◽  
Masaru Kuramoto ◽  
...  
Keyword(s):  
2020 ◽  
Vol 26 (5) ◽  
pp. 22-27
Author(s):  
Jehan Akbar ◽  
Muhammad Hanif ◽  
Muhammad Azhar Naeem ◽  
Kamran Abid

Comparison of performance of semiconductor mode-locked laser diodes fabricated using AlGaInAs/InP material containing 5 and 3 quantum wells (QWs) inside the active region is reported. The simulations and experimental results show that lasers containing five QWs materials produce larger beam divergence and temporally broader optical pulses. For improvement in the mode-locking of lasers and reducing the far-field pattern, the number of QWs inside the active region was decreased from five to three and a far-field decreasing layer along with a thick spacer layer were introduced in the n-cladding region of epitaxial material. Before growing the material, simulations were carried out to optimise the design. The lower optical confinement factor and higher gain saturation energy of three QWs based mode-locked lasers provide higher average and peak output power, reduced and symmetric far-field pattern, better radio frequency (RF) spectra, shorter optical pulses, and stable optimal mode-locking for a wide range of gain current and saturable absorber reverse voltage.


2001 ◽  
Author(s):  
Dieter Huhse ◽  
O. Reimann ◽  
E. H. Boettcher ◽  
Dieter Bimberg

1999 ◽  
Vol 11 (5) ◽  
pp. 518-520 ◽  
Author(s):  
R. Hui ◽  
B. Zhu ◽  
K. Demarest ◽  
C. Allen ◽  
Jin Hong

2014 ◽  
Vol 2 (6) ◽  
Author(s):  
Z. L. Yuan ◽  
M. Lucamarini ◽  
J. F. Dynes ◽  
B. Fröhlich ◽  
M. B. Ward ◽  
...  

2012 ◽  
Vol 37 (19) ◽  
pp. 3972 ◽  
Author(s):  
Takashi Kurita ◽  
Hidetsugu Yoshida ◽  
Toshiyuki Kawashima ◽  
Noriaki Miyanaga

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