10 Gb/s bi-directional gating in semiconductor optical amplifiers for optical cross-connects exploiting network connection-symmetry

2000 ◽  
Author(s):  
A. Buxens ◽  
A.T. Clausen ◽  
H. N. Poulsen ◽  
P. Jeppesen
Keyword(s):  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Network Connection

scholarly journals All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (4) ◽  
pp. 1499
Author(s):  
Bingchen Han ◽  
Junyu Xu ◽  
Pengfei Chen ◽  
Rongrong Guo ◽  
Yuanqi Gu ◽  
...  
Keyword(s):  
Optical Amplifiers ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Extinction Ratio ◽  
Semiconductor Optical Amplifiers ◽  
Optical Signal ◽  
Probe Light ◽  
All Optical ◽  
Negative Effect ◽  
Parity Generator

An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.

scholarly journals 1.1-µm Band Extended Wide-Bandwidth Wavelength-Swept Laser Based on Polygonal Scanning Wavelength Filter

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3053
Author(s):  
Gi Hyen Lee ◽  
Soyeon Ahn ◽  
Jinhwa Gene ◽  
Min Yong Jeon
Keyword(s):  
Optical Amplifiers ◽  
Dynamic Change ◽  
Cholesteric Liquid Crystal ◽  
Average Power ◽  
Semiconductor Optical Amplifiers ◽  
Scanning Speed ◽  
Reflection Band ◽  
First Order ◽  
Wavelength Filter ◽  
Buildup Time

We demonstrated a 1.1-µm band extended wideband wavelength-swept laser (WSL) that combined two semiconductor optical amplifiers (SOAs) based on a polygonal scanning wavelength filter. The center wavelengths of the two SOAs were 1020 nm and 1140 nm, respectively. Two SOAs were connected in parallel in the form of a Mach-Zehnder interferometer. At a scanning speed of 1.8 kHz, the 10-dB bandwidth of the spectral output and the average power were approximately 228 nm and 16.88 mW, respectively. Owing to the nonlinear effect of the SOA, a decrease was observed in the bandwidth according to the scanning speed. Moreover, the intensity of the WSL decreased because the oscillation time was smaller than the buildup time. In addition, a cholesteric liquid crystal (CLC) cell was fabricated as an application of WSL, and the dynamic change of the first-order reflection of the CLC cell in the 1-µm band was observed using the WSL. The pitch jumps of the reflection band occurred according to the electric field applied to the CLC cell, and instantaneous changes were observed.

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