Silicon mode-loop Mach-Zehnder modulator with L-shaped PN junction for 037-V∙cm VπL high efficiency modulation

2021 ◽  
Author(s):  
Jiacheng Liu ◽  
Gangqiang Zhou ◽  
Jiangbing Du ◽  
Weihong Shen ◽  
Linjie Zhou ◽  
...  
Keyword(s):  
High Efficiency ◽  
Pn Junction ◽  
Mach Zehnder Modulator

Design of a silicon Mach–Zehnder modulator with a U-type PN junction

2013 ◽  
Vol 52 (24) ◽  
pp. 5941 ◽  
Author(s):  
Tongtong Cao ◽  
Yonghao Fei ◽  
Libin Zhang ◽  
Yanmei Cao ◽  
Shaowu Chen
Keyword(s):  
Pn Junction ◽  
Mach Zehnder Modulator

scholarly journals Silicon Mach-Zehnder modulator using low-loss phase shifter with bottom PN junction formed by restricted-depth doping

2013 ◽  
Vol 10 (17) ◽  
pp. 20130552-20130552 ◽  
Author(s):  
Kazuhiro Goi ◽  
Kensuke Ogawa ◽  
Yong Tsong Tan ◽  
Vivek Dixit ◽  
Soon Thor Lim ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Low Loss ◽  
Pn Junction ◽  
Mach Zehnder Modulator

scholarly journals Integration of high-efficiency Mach-Zehnder modulator with DFB laser using membrane InP-based devices on Si photonics platform

2020 ◽  
Author(s):  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Takuro Fujii ◽  
Koji Takeda ◽  
Yoshiho Maeda ◽  
...  
Keyword(s):  
High Efficiency ◽  
Si Photonics ◽  
Dfb Laser ◽  
Mach Zehnder Modulator

High-Efficiency Silicon Mach-Zehnder Modulator with U-Shaped PN Junctions

2019 ◽  
Author(s):  
Gangqiang Zhou ◽  
Linjie Zhou ◽  
Yuyao Guo ◽  
Lei Liu ◽  
Liangjun Lu ◽  
...  
Keyword(s):  
High Efficiency ◽  
Mach Zehnder Modulator ◽  
Pn Junctions

scholarly journals Modelling and Analysis of a Plus-Shaped PN Junction Phase Shifter for Data Centre Applications

2021 ◽  
Vol 12 ◽  
pp. 32-37
Author(s):  
R.G. Jesuwanth Sugesh ◽  
A. Sivasubramanian
Keyword(s):  
High Speed ◽  
Phase Shifter ◽  
Simulation Analysis ◽  
Extinction Ratio ◽  
Optical Loss ◽  
Travelling Wave ◽  
Data Centre ◽  
Pn Junction ◽  
High Modulation ◽  
Mach Zehnder Modulator

Scaling up of photonic devices is the current research of interest to meet the alarming demand growth in the data centres. The efficiency of the modulator is determined by the performance of the phase shifter. In this paper, a plus-shaped PN junction phase shifter is designed and analysed. This design improved the modulation efficiency and reduced optical loss for high-speed data operation. The width of the P doped region and thickness of thedoped regions in the slabs are varied to obtain high modulation efficiency. The circuit-level simulation analysis was performed on the proposed phase shifterimported in a travelling wave electrode silicon Mach Zehnder modulator. At 80 Gbps, a maximum extinction ratio of 12.39 dB with a bit error rate of 8.67×10-8 was obtained at VπLπ of 1.05 V.cm for the length of the phase shifter of 3.5 mm. The calculated intrinsic 3 dB bandwidth is ~38 GHz and the energy per bit transmission is 1.71pJ/bit.Further analysis was performed to identify the maximum communication distance supported by this proposed phase shifter design in the silicon Mach Zehnder modulator for the data centre requirements.

scholarly journals Design and Implementation of Travelling Wave Electrode Silicon Mach Zehnder Modulator based Plus-Shaped PN Junction Phase Shifter for Data Centre Application

2021 ◽  
Vol 15 ◽  
pp. 586-594
Author(s):  
R. G. Jesuwanth Sugesh ◽  
A. Sivasubramanian
Keyword(s):  
Phase Shifter ◽  
Simulation Analysis ◽  
Extinction Ratio ◽  
Optical Loss ◽  
Travelling Wave ◽  
Data Centre ◽  
Pn Junction ◽  
Data Rates ◽  
Mach Zehnder Modulator ◽  
Speed Data Transmission

Silicon Mach-Zehnder modulator (SMZM)is fit to high-contrast optical modulation in wide ranges ofspectral along 50 Gbaud symbol rates. Some times itsefficiency is lower in wavelength about 1.31 μm than 1.55μm, it can decrease the Phase Shifter (PS) efficiency andoccupies large amount of data rates. In this manuscript,the plus-shaped PN junction Phase Shifter (PS) isproposed. The major aim of the proposed work is to createan optimum CD type plus-shaped PS including lesser VπL.Silicon MZM including proposed PS can satisfy thehigher-speed data transmission requirement on theapplications of inter with intra data centre. The objectiveof this method is to increase the modulation efficiency(ME) by decreasing the optical loss for higher-speed datarate (DR). To get greater efficiency of modulation, the Pdoped region width and the thickness of doped regions arediffer under slabs. The simulation analysis of circuit-levelis executed in the proposed PS acquired at travelling waveelectrode (TWE) silicon Mach Zehnder modulator. In 80Gbps, the 12.39 dB maximal extinction ratio along8.67×10-8 bit error rate (BER) was acquired in VπLπ of1.05 V.cm for 3.5 mm PS length. The measured intrinsicbandwidth of 3 dB denotes ~38 GHz, whereas thetransmission energy per bit denotes 1.71pJ/bit. Moreexamines are carried out to recognize the maximalcommunication distance using proposed PS under SMZMfor the requirements of data centre.

Optimization of a 64Gbps O-band Thin-Rib PN Junction Mach-Zehnder Modulator Fabricated on a 200mm Silicon Photonics Platform

2018 ◽  
Author(s):  
B. Szelag ◽  
B. Charbonnier ◽  
O. Lemonnier ◽  
S. Brision ◽  
B. Blampey ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Pn Junction ◽  
Mach Zehnder Modulator
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