Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

2020 ◽  
Vol 8 (4) ◽  
pp. 457
Author(s):  
Marco Passoni ◽  
Dario Gerace ◽  
Liam O’Faolain ◽  
Lucio Claudio Andreani
Keyword(s):  
Energy Dissipation ◽  
Slow Light ◽  
Light Modulators

OOK and QPSK Operation with Wide Working Spectrum in 200–300 μm Si Photonic Crystal Slow Light Modulators

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Yosuke Terada ◽  
Yosuke Hinakura ◽  
Keiko Hojo ◽  
Naoya Yazawa ◽  
Tomohiko Watanabe ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Slow Light ◽  
Light Modulators

Si Photonic Crystal Slow-Light Modulators with Periodic p–n Junctions

2017 ◽  
Vol 35 (9) ◽  
pp. 1684-1692 ◽  
Author(s):  
Yosuke Terada ◽  
Tomoki Tatebe ◽  
Yosuke Hinakura ◽  
Toshihiko Baba
Keyword(s):  
Photonic Crystal ◽  
Slow Light ◽  
Light Modulators

Slotted Photonic Crystal Slow Light Modulators

2011 ◽  
Author(s):  
J. Leuthold ◽  
W. Freude ◽  
C. Koos ◽  
L. Alloatti ◽  
D. Korn ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Slow Light ◽  
Light Modulators

scholarly journals Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Nanophotonics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 1485-1494 ◽  
Author(s):  
Marco Passoni ◽  
Dario Gerace ◽  
Liam O’Faolain ◽  
Lucio Claudio Andreani
Keyword(s):  
Slow Light ◽  
Band Edge ◽  
Field Profile ◽  
Dispersion Effect ◽  
Free Carriers ◽  
Silicon Waveguide ◽  
Light Modulators ◽  
Previous Design ◽  
Waveguide Gratings ◽  
Plasma Dispersion

AbstractSlow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20–30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation.

Slow-Light Modulators in Silicon Waveguides Gratings

2019 ◽  
Author(s):  
Lucio C. Andreani ◽  
Marco Passoni ◽  
Dario Gerace ◽  
G. Chinna R. Devarapu ◽  
Liam O'Faolain
Keyword(s):  
Slow Light ◽  
Silicon Waveguides ◽  
Light Modulators

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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