Colloidal quantum dot surface engineering for high performance optoelectronic devices

Author(s):  
Zhijun Ning ◽  
Xiwen Gong ◽  
Riccardo Comin ◽  
Grant Walters ◽  
Fengjia Fan ◽  
...  
2016 ◽  
Vol 9 (4) ◽  
pp. 1130-1143 ◽  
Author(s):  
Ruili Wang ◽  
Yuequn Shang ◽  
Pongsakorn Kanjanaboos ◽  
Wenjia Zhou ◽  
Zhijun Ning ◽  
...  

Colloidal quantum dots (CQDs) are fast-improving materials for next-generation solution-processed optoelectronic devices such as solar cells, photocatalysis, light emitting diodes, and photodetectors.


2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.


Author(s):  
Sean Hinds ◽  
Ethan Klem ◽  
Christopher Gregory ◽  
Allan Hilton ◽  
Greg Hames ◽  
...  

2012 ◽  
Vol 24 (33) ◽  
pp. 4540-4546 ◽  
Author(s):  
Sung Hwan Cho ◽  
Jinwoo Sung ◽  
Ihn Hwang ◽  
Richard Hahnkee Kim ◽  
Yeon Sik Choi ◽  
...  

2016 ◽  
Vol 26 (29) ◽  
pp. 5284-5289 ◽  
Author(s):  
Zhiwen Jin ◽  
Mingjian Yuan ◽  
Hui Li ◽  
Hui Yang ◽  
Qing Zhou ◽  
...  

2016 ◽  
Vol 27 (42) ◽  
pp. 425204 ◽  
Author(s):  
Haiting Zhang ◽  
Yating Zhang ◽  
Xiaoxian Song ◽  
Yu Yu ◽  
Mingxuan Cao ◽  
...  

2015 ◽  
Vol 17 (37) ◽  
pp. 24412-24419 ◽  
Author(s):  
Mohammad Mahdi Tavakoli ◽  
Hossein Aashuri ◽  
Abdolreza Simchi ◽  
Zhiyong Fan

Recently, hybrid nanocomposites consisting of graphene/nanomaterial heterostructures have emerged as promising candidates for the fabrication of optoelectronic devices.


2013 ◽  
Author(s):  
Ethan Klem ◽  
Jay Lewis ◽  
Chris Gregory ◽  
Garry Cunningham ◽  
Dorota Temple ◽  
...  

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