scholarly journals Absorption of terahertz radiation by a thin metal absorber in conventional and inverted bolometers

OSA Continuum ◽  
2019 ◽  
Vol 2 (6) ◽  
pp. 2085
Author(s):  
M. A. Dem’yanenko ◽  
I. V. Marchishin ◽  
V. V. Startsev
2018 ◽  
Vol 120 (8) ◽  
Author(s):  
M. B. Agranat ◽  
O. V. Chefonov ◽  
A. V. Ovchinnikov ◽  
S. I. Ashitkov ◽  
V. E. Fortov ◽  
...  

Author(s):  
J. Bentley ◽  
E. A. Kenik

Instruments combining a 100 kV transmission electron microscope (TEM) with scanning transmission (STEM), secondary electron (SEM) and x-ray energy dispersive spectrometer (EDS) attachments to give analytical capabilities are becoming increasingly available and useful. Some typical applications in the field of materials science which make use of the small probe size and thin specimen geometry are the chemical analysis of small precipitates contained within a thin foil and the measurement of chemical concentration profiles near microstructural features such as grain boundaries, point defect clusters, dislocations, or precipitates. Quantitative x-ray analysis of bulk samples using EDS on a conventional SEM is reasonably well established, but much less work has been performed on thin metal foils using the higher accelerating voltages available in TEM based instruments.


Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


2020 ◽  
Vol 92 (2) ◽  
pp. 20502
Author(s):  
Behrokh Beiranvand ◽  
Alexander S. Sobolev ◽  
Anton V. Kudryashov

We present a new concept of the thermoelectric structure that generates microwave and terahertz signals when illuminated by femtosecond optical pulses. The structure consists of a series array of capacitively coupled thermocouples. The array acts as a hybrid type microwave transmission line with anomalous dispersion and phase velocity higher than the velocity of light. This allows for adding up the responces from all the thermocouples in phase. The array is easily integrable with microstrip transmission lines. Dispersion curves obtained from both the lumped network scheme and numerical simulations are presented. The connection of the thermocouples is a composite right/left-handed transmission line, which can receive terahertz radiation from the transmission line ports. The radiation of the photon to the surface of the thermocouple structure causes a voltage difference with the bandwidth of terahertz. We examined a lossy composite right/left-handed transmission line to extract the circuit elements. The calculated properties of the design are extracted by employing commercial software package CST STUDIO SUITE.


2006 ◽  
Vol 133 ◽  
pp. 511-514
Author(s):  
T. Matsuoka ◽  
A. Maksimchuk ◽  
T. Lin ◽  
O. V. Batishchev ◽  
A. A. Batishcheva ◽  
...  

1984 ◽  
Vol 45 (C2) ◽  
pp. C2-381-C2-386
Author(s):  
P. Doig ◽  
P. E.J. Flewitt
Keyword(s):  
X Ray ◽  

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