scholarly journals Full-color-sorting metalenses for high-sensitivity image sensors

Optica ◽  
2021 ◽  
Author(s):  
Masashi Miyata ◽  
Naru Nemoto ◽  
Kota Shikama ◽  
Fumihide Kobayashi ◽  
Toshikazu Hashimoto
Keyword(s):  
High Sensitivity ◽  
Image Sensors ◽  
Full Color

scholarly journals Full-color nanorouter for high-resolution imaging

Nanoscale ◽  
2021 ◽  
Author(s):  
Mingjie Chen ◽  
Long Wen ◽  
Dahui Pan ◽  
David Cumming ◽  
Xianguang Yang ◽  
...  
Keyword(s):  
High Resolution ◽  
Color Image ◽  
Image Sensors ◽  
Structural Color ◽  
High Resolution Imaging ◽  
Scaling Effects ◽  
Full Color ◽  
Resolution Imaging

Pixel scaling effects have been a major issue for the development of high-resolution color image sensors due to the reduced photoelectric signal and the color crosstalk. Various structural color techniques...

Proposal of Micro-Trichroic Structures for High-Sensitivity Color Image Sensors

2011 ◽  
Vol 50 (4) ◽  
pp. 042201 ◽  
Author(s):  
Yuta Suzuki ◽  
Yasuyuki Ozeki ◽  
Tomoki Yoshino ◽  
Kazuhiro Yamada ◽  
Michihiro Yamagata ◽  
...  
Keyword(s):  
Color Image ◽  
High Sensitivity ◽  
Image Sensors

Performance of Photo-Transistors with thin (50 nm.) a-Si:H Layers

1995 ◽  
Vol 377 ◽  
Author(s):  
Serag M. GadelRab ◽  
Savvas G. Chamberlain
Keyword(s):  
Contact Resistance ◽  
High Sensitivity ◽  
Transient Behavior ◽  
Image Sensors ◽  
Optical Path ◽  
Transistor Structure ◽  
Optical Sensitivity

ABSTRACTPhoto-transistor based a-Si:H image sensors allow the integration of photo-elements and pixel circuitry using standard TFT fabrication processes. While pixel circuitry use thin a-Si:H films (≈ 0.05μm) to minimize the contact resistance, photo-transistors require thick a-Si:H films (≈0.5μm) to maximize photo-sensitivity. We fabricated a new, high sensitivity photo-transistor structure using 0.05μ a-Si:H films. High optical sensitivity is achieved by separating the conduction paths of photo-generated electrons and holes using a secondary gate. Further, the optical path within the photo-transistor is doubled through manipulation of device layout. The photo-transistor show an Ilight/Idarkratio in excess of 103.We compared the transient behavior of conventional and high-sensitivity photo-transistors. We found that both devices display an increase in current with time when biased in either the dark or illuminated conditions. The current increases by six orders of magnitudes then saturates within 200 seconds of bias application. Experiments indicate that this transient behavior is due to a rise in the conductivity of the gap region with time; measurements on 0.05μm thick photo-resistor structures showed that their current increases with time. The shape and temporal range of this behavior rules out the presence of parasitic capacitive effects.

High-Sensitivity Image Sensors Overlaid With Thin-Film Gallium Oxide/Crystalline Selenium Heterojunction Photodiodes

2016 ◽  
Vol 63 (1) ◽  
pp. 86-91 ◽  
Author(s):  
Shigeyuki Imura ◽  
Kenji Kikuchi ◽  
Kazunori Miyakawa ◽  
Hiroshi Ohtake ◽  
Misao Kubota ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
High Sensitivity ◽  
Image Sensors

scholarly journals A skin-like two-dimensionally pixelized full-color quantum dot photodetector

2019 ◽  
Vol 5 (11) ◽  
pp. eaax8801 ◽  
Author(s):  
Jaehyun Kim ◽  
Sung-Min Kwon ◽  
Yeo Kyung Kang ◽  
Yong-Hoon Kim ◽  
Myung-Jae Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Transport ◽  
Image Sensors ◽  
Indium Gallium Zinc Oxide ◽  
Practical Realization ◽  
Spectral Image ◽  
Oxide Semiconductors ◽  
Full Color ◽  
Efficient Charge ◽  
Color Filters

Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (<150°C) fabricated two-dimensionally pixelized full-color photodetector by using monolithic integration of various-sized colloidal quantum dots (QDs) and amorphous indium-gallium-zinc-oxide semiconductors. By introducing trap-reduced chelating chalcometallate ligands, highly efficient charge carrier transport and photoresistor-free fine-patterning of QD layers were successfully realized, exhibiting extremely high photodetectivity (>4.2 × 1017 Jones) and photoresponsivity (>8.3 × 103 A W−1) in a broad range of wavelengths (365 to 1310 nm). On the basis of these technologies, a wavelength discriminable phototransistor circuit array (>600 phototransistors) was implemented on a skin-like soft platform, which is expected to be a versatile and scalable approach for wide spectral image sensors and human-oriented biological devices.

Transient Current Behavior of Vertically Integrated Amorphous Silicon Diodes

2007 ◽  
Vol 989 ◽  
Author(s):  
Gregory Choong ◽  
Nicolas Wyrsch ◽  
Christophe Ballif ◽  
Rolf Kaufmann ◽  
Felix Lustenberger
Keyword(s):  
Bias Voltage ◽  
High Sensitivity ◽  
Transient Behavior ◽  
Image Sensor ◽  
Image Sensors ◽  
Commercial Development ◽  
Active Pixel ◽  
Constant Bias ◽  
Pixel Sensors ◽  
A Charge

AbstractMonolithic image sensors based on Thin Film on CMOS (TFC) Technology are becoming more and more attractive as an alternative solution to conventional active pixel sensors (APS). Imager with high sensitivity, high dynamic coupled with low dark current values (10-100 pA/cm2 @ 104 V/cm) have been developed. However, issues such as light-induced degradation and image lag hinder the commercial development of a-Si:H based image sensors. The problem of image lag is caused by residual current due to the release of trapped charges after the switch off of the illumination.In this paper, we present a comprehensive study of the transient behavior of the photocurrent in a-Si:H photodiodes deposited on glass, as well as in corresponding diodes implemented in a TFC image sensor when illumination is switched off or periodically varied. The influence of the pixel architecture for two different cases is also analyzed: One setup reproduces the typical 3 transisor APS pixel architecture behavior, in which the bias voltage of the diode varies with the photogenerated charge while the second setup keeps a constant bias voltage applied to the diode by using a charge integrator.The influence of the light-induced defect creation on the performance of the sensors is also presented and discussed.

High Sensitivity Readout of 2D a-Si Image Sensors

1993 ◽  
Vol 32 (Part 1, No. 1A) ◽  
pp. 198-204 ◽  
Author(s):  
Ichiro Fujieda ◽  
Robert A. Street ◽  
Richard L. Weisfield ◽  
Steve Nelson ◽  
Per Nylén ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Image Sensors

Large area, full-color, digital image sensors made with semiconducting polymers

2000 ◽  
Vol 111-112 ◽  
pp. 133-137 ◽  
Author(s):  
Gang Yu ◽  
Gordana Srdanov ◽  
Jian Wang ◽  
Hailiang Wang ◽  
Yong Cao ◽  
...  
Keyword(s):  
Digital Image ◽  
Image Sensors ◽  
Semiconducting Polymers ◽  
Large Area ◽  
Full Color

scholarly journals Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors

2011 ◽  
Vol 21 (2) ◽  
pp. 60-64
Author(s):  
Ye-Na Kim ◽  
Soon-Woo Kwon ◽  
Seung-Jun Park ◽  
Woo-Kyug Kim ◽  
Han-Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
High Sensitivity ◽  
Image Sensors ◽  
Optoelectronic Properties
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