scholarly journals Annealing of deposited SiO_2 thin films: full-atomistic simulation results

2016 ◽  
Vol 6 (12) ◽  
pp. 3960 ◽  
Author(s):  
F.V. Grigoriev ◽  
E.V. Katkova ◽  
A.V. Sulimov ◽  
V.B. Sulimov ◽  
A.V. Tikhonravov
Keyword(s):  
Thin Films ◽  
Atomistic Simulation ◽  
Simulation Results

Fem Simulation of Micro-Rotating-Structures and Their Applications in Measurement of Residual Stresses in Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Fem Simulation ◽  
Sensitivity Factor ◽  
Local Measurement ◽  
Micro Structure ◽  
Micro Raman Spectroscopy ◽  
Before And After ◽  
Polysilicon Films ◽  
Simulation Results

ABSTRACTFEM simulation of micro-rotating-structures was performed for local measurement of residual stresses in thin films. A sensitivity factor is introduced, studied and tabulated from the simulation results. The residual stress can be evaluated from the rotating deflection, the lengths of rotating and fixed beams, and the sensitivity factor. The micro-structure technique was applied to measure residual stresses in both silicon nitride and polysilicon thin films, before and after rapid thermal annealing (RTA), and further confirmed by wafer curvature method. Residual stresses in polysilicon films at different RTA stages were also characterized by micro-Raman spectroscopy (MRS). The experimental results indicate that micro-rotating-structures indeed have the ability to measure spatially and locally residual stresses in MEMS thin films with appropriate sensitivities.

The Study on Young's Modulus of Multilayered Cu/Ni Multilayered Nano Thin Films by Molecular Dynamics Simulation

2014 ◽  
Vol 513-517 ◽  
pp. 113-116
Author(s):  
Jen Ching Huang ◽  
Fu Jen Cheng ◽  
Chun Song Yang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Strain Rate ◽  
Young’S Modulus ◽  
Potential Function ◽  
Dynamics Simulation ◽  
System Temperature ◽  
Simulation Results

The Youngs modulus of multilayered nanothin films is an important property. This paper focused to investigate the Youngs Modulus of Multilayered Ni/Cu Multilayered nanoThin Films under different condition by Molecular Dynamics Simulation. The NVT ensemble and COMPASS potential function were employed in the simulation. The multilayered nanothin film contained the Ni and Cu thin films in sequence. From simulation results, it is found that the Youngs modulus of Cu/Ni multilayered nanothin film is different at different lattice orientations, temperatures and strain rate. After experiments, it can be found that the Youngs modulus of multilayered nanothin film in the plane (100) is highest. As thickness of the thin film and system temperature rises, Youngs modulus of multilayered nanothin film is reduced instead. And, the strain rate increases, the Youngs modulus of Cu/Ni multilayered nanothin film will also increase.

A New Dislocation-Dynamics Model and Its Application in Thin Film-Substrate Systems

2005 ◽  
Vol 875 ◽  
Author(s):  
E.H. Tan ◽  
L.Z. Sun
Keyword(s):  
Thin Films ◽  
Mechanical Performance ◽  
Dislocation Motion ◽  
Dislocation Dynamics ◽  
Dislocation Segment ◽  
Dislocation Loops ◽  
Dynamics Model ◽  
Proposed Model ◽  
Simulation Results ◽  
Film Substrate

AbstractBased on the physical background, a new dislocation dynamics model fully incorporating the interaction among differential dislocation segments is developed to simulate 3D dislocation motion in crystals. As the numerical simulation results demonstrate, this new model completely solves the long-standing problem that simulation results are heavily dependent on dislocation-segment lengths in the classical dislocation dynamics theory. The proposed model is applied to simulate the effect of dislocations on the mechanical performance of thin films. The interactions among the dislocation loops, free surface and interfaces are rigorously computed by a decomposition method. This framework can be used to simulate how a surface loop evolves into two threading dislocations and to determine the critical thickness of thin films. Furthermore, the relationship between the film thickness and yield strength is established and compared with the conventional Hall-Petch relation.

On the features of dislocation–obstacle interaction in thin films: large-scale atomistic simulation

2006 ◽  
Vol 86 (8) ◽  
pp. 511-519 ◽  
Author(s):  
Y. N. Osetsky ◽  
Y. Matsukawa ◽  
R. E. Stoller ◽  
S. J. Zinkle
Keyword(s):  
Thin Films ◽  
Atomistic Simulation ◽  
Large Scale

Crystallization of amorphous silicon thin films: comparison between experimental and computer simulation results

2008 ◽  
Vol 43 (11) ◽  
pp. 3976-3981
Author(s):  
J. Kioseoglou ◽  
Ph. Komninou ◽  
G. P. Dimitrakopulos ◽  
I. P. Antoniades ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Simulation Results

A SAW Filter of Elliptic Structure IDT

2014 ◽  
Vol 665 ◽  
pp. 623-628
Author(s):  
Dai Qiang Wang ◽  
Liang Rong Li ◽  
Yu Qing Chen ◽  
Zu Ming Yao ◽  
Hong Gong ◽  
...  
Keyword(s):  
Thin Films ◽  
Center Frequency ◽  
Band Pass Filter ◽  
Function Model ◽  
Modeling Tools ◽  
Pass Filter ◽  
Band Pass ◽  
Simulation Results ◽  
Weighting Methods ◽  
Piezoelectric Substrate

The design uses silicon-AlN thin films as the piezoelectric substrate, Use apo- dization weighting methods to optimize the design of IDT. The improved δ function model was Modeling Tools of Apodization weighted ellipse IDT structure, According to the result of simulation, we designed a layout of SAW band-pass filter and fabricated a sample of it which center frequency is 300MHz and insertion loss is 7dB, The research shows the consistency of simulation results with the experimental results.

scholarly journals Cyclic Indentation of Iron: A Comparison of Experimental and Atomistic Simulations

Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 541 ◽  
Author(s):  
Shayan Deldar ◽  
Iyad Alabd Alhafez ◽  
Marek Smaga ◽  
Tilmann Beck ◽  
Herbert M. Urbassek
Keyword(s):  
Power Law ◽  
Atomistic Simulation ◽  
Plastic Material ◽  
Atomistic Simulations ◽  
Repeated Loading ◽  
Dislocation Network ◽  
Cycle Number ◽  
Hysteresis Width ◽  
Cyclic Indentation ◽  
Simulation Results

Cyclic indentation is a technique used to characterize materials by indenting repeatedly on the same location. This technique allows information to be obtained on how the plastic material response changes under repeated loading. We explore the processes underlying this technique using a combined experimental and simulative approach. We focus on the loading–unloading hysteresis and the dependence of the hysteresis width ha,p on the cycle number. In both approaches, we obtain a power-law demonstrating ha,p with respect to the hardening exponent e. A detailed analysis of the atomistic simulation results shows that changes in the dislocation network under repeated indentation are responsible for this behavior.

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