Fluorophore and protein conjugated Diels-Alder functionalized CVD graphene layers

Huai-Ning Chang; Santanu Sarkar; James R. Baker; Theodore B. Norris

doi:10.1364/ome.6.003242

Electron-Selective TiO2 /CVD-Graphene Layers for Photocorrosion Inhibition in Cu2 O Photocathodes

Advanced Materials Interfaces ◽

10.1002/admi.201700271 ◽

2017 ◽

Vol 4 (17) ◽

pp. 1700271 ◽

Cited By ~ 16

Author(s):

Chandan Das ◽

Balakrishna Ananthoju ◽

Arpan Kumar Dhara ◽

Mohammed Aslam ◽

Shaibal K. Sarkar ◽

...

Keyword(s):

Cvd Graphene ◽

Graphene Layers ◽

Photocorrosion Inhibition

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Double-layer CVD graphene as stretchable transparent electrodes

Nanoscale ◽

10.1039/c4nr00265b ◽

2014 ◽

Vol 6 (11) ◽

pp. 6057-6064 ◽

Cited By ~ 48

Author(s):

Sejeong Won ◽

Yun Hwangbo ◽

Seoung-Ki Lee ◽

Kyung-Shik Kim ◽

Kwang-Seop Kim ◽

...

Keyword(s):

Double Layer ◽

Strain Relaxation ◽

Transparent Electrodes ◽

Cvd Graphene ◽

Graphene Layers

DLG has a superior electromechanical stretchability compared to SLG owing to strain relaxationviasliding of graphene layers over one another.

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Strain Gauges Based on CVD Graphene Layers and Exfoliated Graphene Nanoplatelets with Enhanced Reproducibility and Scalability for Large Quantities

Sensors ◽

10.3390/s17122937 ◽

2017 ◽

Vol 17 (12) ◽

pp. 2937 ◽

Cited By ~ 9

Author(s):

Volkan Yokaribas ◽

Stefan Wagner ◽

Daniel Schneider ◽

Philipp Friebertshäuser ◽

Max Lemme ◽

...

Keyword(s):

Graphene Nanoplatelets ◽

Strain Gauges ◽

Cvd Graphene ◽

Graphene Layers ◽

Exfoliated Graphene

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Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Modern Electronic Materials ◽

10.3897/j.moem.5.4.52068 ◽

2019 ◽

Vol 5 (4) ◽

pp. 165-173

Author(s):

Alexander K. Fedotov ◽

Sergey L. Prishchepa ◽

Alexander S. Fedotov ◽

Vladzislaw E. Gumennik ◽

Ivan V. Komissarov ◽

...

Keyword(s):

Magnetic Field ◽

Quantum Interference ◽

Particle Deposition ◽

Carrier Transport ◽

Ohmic Contacts ◽

Weak Localization ◽

Thermal Fluctuations ◽

Field Range ◽

Cvd Graphene ◽

Graphene Layers

Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R�(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R�(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.

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Towards Perfect Absorption of Single Layer CVD Graphene in an Optical Resonant Cavity: Challenges and Experimental Achievements

Materials ◽

10.3390/ma15010352 ◽

2022 ◽

Vol 15 (1) ◽

pp. 352

Author(s):

Abedin Nematpour ◽

Maria Luisa Grilli ◽

Laura Lancellotti ◽

Nicola Lisi

Keyword(s):

Incident Angle ◽

Resonant Cavity ◽

Experimental Studies ◽

Single Layer ◽

Absorption Enhancement ◽

Perfect Absorption ◽

Cvd Graphene ◽

Graphene Layers ◽

Absorption Increase ◽

Fabry Perot

Graphene is emerging as a promising material for the integration in the most common Si platform, capable to convey some of its unique properties to fabricate novel photonic and optoelectronic devices. For many real functions and devices however, graphene absorption is too low and must be enhanced. Among strategies, the use of an optical resonant cavity was recently proposed, and graphene absorption enhancement was demonstrated, both, by theoretical and experimental studies. This paper summarizes our recent progress in graphene absorption enhancement by means of Si/SiO2-based Fabry–Perot filters fabricated by radiofrequency sputtering. Simulations and experimental achievements carried out during more than two years of investigations are reported here, detailing the technical expedients that were necessary to increase the single layer CVD graphene absorption first to 39% and then up to 84%. Graphene absorption increased when an asymmetric Fabry–Perot filter was applied rather than a symmetric one, and a further absorption increase was obtained when graphene was embedded in a reflective rather than a transmissive Fabry–Perot filter. Moreover, the effect of the incident angle of the electromagnetic radiation and of the polarization of the light was investigated in the case of the optimized reflective Fabry–Perot filter. Experimental challenges and precautions to avoid evaporation or sputtering induced damage on the graphene layers are described as well, disclosing some experimental procedures that may help other researchers to embed graphene inside PVD grown materials with minimal alterations.

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