scholarly journals Quantum confinement dependence of exciton localization in a-plane GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence

2015 ◽  
Vol 5 (11) ◽  
pp. 2608 ◽  
Author(s):  
Feng Wu ◽  
Jun Zhang ◽  
Shuai Wang ◽  
Hanling Long ◽  
Jiangnan Dai ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Temperature Dependent ◽  
Exciton Localization ◽  
Temperature Dependent Photoluminescence

Temperature Dependence of Bound Exciton Emissions in GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
D. G. Chtchekine ◽  
G. D. Gilliland ◽  
Z. C. Feng ◽  
S. J. Chua ◽  
D. J. Wolford ◽  
...  
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Free Exciton ◽  
Shallow Donor ◽  
Temperature Dependent ◽  
Exciton Dissociation ◽  
Localization Energy ◽  
Exciton Localization ◽  
Neutral Acceptor ◽  
Temperature Dependent Photoluminescence

AbstractThe dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K) is found to be dominated by the release of a free exciton with thermal activation energy consistent with the exciton localization energy. At higher temperatures a second dissociation channel with activation energy EA = 28 ± 2 meV is observed. The dissociation of a bound exciton complex with exciton localization energy Exloc = 11.7 meV is also dominated by the release of a free exciton. In contrast to previous studies evidence is presented against the hypothesis of this emission being due to the exciton bound to an ionized donor. We find that it originates most likely from an exciton bound to a neutral acceptor.

scholarly journals Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions

2011 ◽  
Vol 110 (9) ◽  
pp. 094309 ◽  
Author(s):  
Mallar Ray ◽  
Nil Ratan Bandyopadhyay ◽  
Ujjwal Ghanta ◽  
Robert F. Klie ◽  
Ashit Kumar Pramanick ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature Dependence of Bound Exciton Emissions in GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 733-738 ◽  
Author(s):  
D. G. Chtchekine ◽  
G. D. Gilliland ◽  
Z. C. Feng ◽  
S. J. Chua ◽  
D. J. Wolford ◽  
...  
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Free Exciton ◽  
Shallow Donor ◽  
Temperature Dependent ◽  
Exciton Dissociation ◽  
Localization Energy ◽  
Exciton Localization ◽  
Neutral Acceptor ◽  
Temperature Dependent Photoluminescence

The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K) is found to be dominated by the release of a free exciton with thermal activation energy consistent with the exciton localization energy. At higher temperatures a second dissociation channel with activation energy EA = 28 ± 2 meV is observed. The dissociation of a bound exciton complex with exciton localization energy EXloc = 11.7 meV is also dominated by the release of a free exciton. In contrast to previous studies evidence is presented against the hypothesis of this emission being due to the exciton bound to an ionized donor. We find that it originates most likely from an exciton bound to a neutral acceptor.

Combustion Synthesis and Temperature Dependent Photoluminescence of Nanocrystalline Y2Zr2O7: Eu3+

2009 ◽  
Vol 24 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Dian-Yuan WANG ◽  
Qing-Kai WANG ◽  
Zhang-Yong CHANG ◽  
Yan-Yan GUO ◽  
Xing-Hua WU
Keyword(s):  
Combustion Synthesis ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence from MEH-PPV and MEH-OPPV containing oxadiazole in the main chain

2006 ◽  
Vol 84 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
F. Kong ◽  
X.L. Wu ◽  
G.S. Huang ◽  
R.K. Yuan ◽  
C.Z. Yang ◽  
...  
Keyword(s):  
Main Chain ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

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