Nonlinear surface plasmons guided by thin metal films

1984 ◽  
Vol 9 (6) ◽  
pp. 235 ◽  
Author(s):  
George I. Stegeman ◽  
Colin T. Seaton
Keyword(s):  
Surface Plasmons ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Nonlinear Surface

Light scattering by surface plasmons in thin metal films

1979 ◽  
Vol 85 (1) ◽  
pp. 125-136 ◽  
Author(s):  
M. Fukui ◽  
V.C.-Y. So ◽  
G.I. Stegeman
Keyword(s):  
Light Scattering ◽  
Surface Plasmons ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Surface Plasmons in Thin Metal Films, Circular Cylinders, and Spherical Voids

1977 ◽  
Vol 82 (2) ◽  
pp. 685-693 ◽  
Author(s):  
V. V. Maksimenko ◽  
A. J. Simosnov ◽  
A. A. Lushnikov
Keyword(s):  
Surface Plasmons ◽  
Metal Films ◽  
Thin Metal ◽  
Circular Cylinders ◽  
Thin Metal Films ◽  
Spherical Voids

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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