Combined multi-band infrared camouflage and thermal management via simple multilayer structure design

2021 ◽  
Author(s):  
Yang Yue ◽  
Wang Lei ◽  
Tang Xianglin ◽  
Li Bin ◽  
Hu Yizhi ◽  
...  
Author(s):  
Aleš Chvála ◽  
Robert Szobolovszký ◽  
Jaroslav Kováč ◽  
Martin Florovič ◽  
Juraj Marek ◽  
...  

In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. We have deployed a temperature measurement approach utilizing electrical I-V characteristics of the neighboring Schottky diode under different dissipated power of the transistor heat source. These methods are verified by measurements with micro thermistors. The results show that these methods have a potential for HEMT analysis in thermal management. The features and limitations of the proposed methods are discussed. The thermal parameters of materials used in the device are extracted from temperature distribution in the structure with the support of 3-D device thermal simulation. The thermal analysis of the multifinger power HEMT is performed. The effects of the structure design and fabrication processes from semiconductor layers, metallization, and packaging up to cooling solutions are investigated. The analysis of thermal behavior can help during design and optimization of power HEMT.


Vacuum ◽  
2020 ◽  
Vol 172 ◽  
pp. 109064 ◽  
Author(s):  
Di Wang ◽  
Songsheng Lin ◽  
Lingyun Liu ◽  
Hongzhi Yang ◽  
Jing Shi ◽  
...  

2021 ◽  
Vol 2116 (1) ◽  
pp. 012115
Author(s):  
T Swoboda ◽  
K Klinar ◽  
A Kitanovski ◽  
M Muñoz Rojo

Abstract Thermal diodes are devices that allow heat to flow preferentially in one direction. This unique thermal management capability has attracted attention in various applications, like electronics, sensors, energy conversion or space applications, among others. Despite their interest, the development of efficient thermal diodes remains still a challenge. In this paper, we report a scalable and adjustable thermal diode based on a multilayer structure that consists of a combination of phase change and phase invariant materials. We applied a parametric sweep in order to find the optimum conditions to maximize the thermal rectification ratio. Our simulations predicted a maximum thermal rectification ratio of ~20%. To evaluate the impact of these devices in real applications, we theoretically analysed the performance of a magnetocaloric refrigerating device that integrates this thermal diode. The results showed a 0.18 K temperature span between the heat source and the heat sink at an operating frequency of 25 Hz.


Nano Energy ◽  
2020 ◽  
Vol 69 ◽  
pp. 104449 ◽  
Author(s):  
Meiyan Pan ◽  
Yun Huang ◽  
Qiang Li ◽  
Hao Luo ◽  
Huanzheng Zhu ◽  
...  

2021 ◽  
Author(s):  
Xingdong Feng ◽  
Fei Zhang ◽  
Mingbo Pu ◽  
Yinghui Guo ◽  
Ping Gao ◽  
...  

2020 ◽  
Vol 44 (6) ◽  
pp. 4321-4334 ◽  
Author(s):  
Kai Chen ◽  
Yiming Chen ◽  
Mengxuan Song ◽  
Shuangfeng Wang

RSC Advances ◽  
2016 ◽  
Vol 6 (70) ◽  
pp. 65504-65517 ◽  
Author(s):  
Jibin Pu ◽  
Siming Ren ◽  
Zhibin Lu ◽  
Liping Wang

Solid lubricant coatings have received considerable research attention in space applications owing to their remarkably improved tribological characteristics.


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