Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip geometry

2021 ◽  
Author(s):  
Meng Tian ◽  
Huabin Yu ◽  
Muhammad Memon ◽  
Zhanyong Xing ◽  
Chen Huang ◽  
...  
Keyword(s):  
Rational Design ◽  
Light Extraction ◽  
Deep Ultraviolet ◽  
Chip Geometry

scholarly journals Investigation on Light Extraction Behavior of Surface Plasmon-Coupled Deep-Ultraviolet LED in Different Emission Directions

Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Mei Ge ◽  
Yi Li ◽  
Youhua Zhu ◽  
Meiyu Wang
Keyword(s):  
Surface Plasmon ◽  
Three Dimensional ◽  
Strong Absorption ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Time Domain Simulation ◽  
Al Nanoparticles ◽  
Extraction Behavior ◽  
Deep Ultraviolet ◽  
Difference Time

The light extraction behavior of an AlGaN-based deep-ultraviolet LED covered with Al nanoparticles (NPs) is investigated by three-dimensional finite-difference time-domain simulation. For the transmission spectra of s- and p-polarizations in different emission directions, the position of maximum transmittance can be changed from (θ = 0°, λ = 273 nm) to (θ = 0°, λ = 286 nm) by increasing the diameter of Al NPs from 40 nm to 80 nm. In the direction that is greater than the critical angle, the transmittance of s-polarization is very small due to the strong absorption of Al NPs, while the transmittance spectrum of p-polarization can be observed obviously for the 80 nm Al NPs structure. For a ~284 nm AlGaN-based LED with surface plasmon (SP) coupling, although the luminous efficiency is significantly improved due to the improvement of the radiation recombination rate as compared with the conventional LED, the light extraction efficiency (LEE) is lower than 2.61% of the conventional LED without considering the lateral surface extraction and bottom reflection. The LEE is not greater than ~0.98% (~2.12%) for an SP coupling LED with 40 nm (80 nm) Al NPs. The lower LEE can be attributed to the strong absorption of Al NPs.

Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates

2011 ◽  
Vol 99 (12) ◽  
pp. 121906 ◽  
Author(s):  
Kohei Ueno ◽  
Atsushi Kobayashi ◽  
Jitsuo Ohta ◽  
Masaharu Oshima ◽  
Hiroshi Fujioka
Keyword(s):  
Ultraviolet Light ◽  
Light Extraction ◽  
Optical Polarization ◽  
Deep Ultraviolet

scholarly journals Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs

RSC Advances ◽  
2017 ◽  
Vol 7 (87) ◽  
pp. 55157-55162 ◽  
Author(s):  
Jinjian Zheng ◽  
Jinchai Li ◽  
Zhibai Zhong ◽  
Wei Lin ◽  
Li Chen ◽  
...  
Keyword(s):  
Valence Band ◽  
Light Extraction ◽  
Interband Transitions ◽  
Light Emitting ◽  
Al Content ◽  
Induced Stress ◽  
Deep Ultraviolet ◽  
High Al Content ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes

The light extraction from AlGaN deep ultraviolet light-emitting diodes (UV LEDs) is known to be limited by the fundamental valence band crossover issue.

Sign in / Sign up

Export Citation Format

Share Document