scholarly journals High extinction ratio on-chip pump-rejection filter based on cascaded grating-assisted contra-directional couplers in silicon nitride rib waveguides

2019 ◽  
Vol 44 (9) ◽  
pp. 2310 ◽  
Author(s):  
Xiaomin Nie ◽  
Nina Turk ◽  
Yang Li ◽  
Zuyang Liu ◽  
Roel Baets
Keyword(s):  
Silicon Nitride ◽  
Extinction Ratio ◽  
Directional Couplers ◽  
High Extinction Ratio ◽  
Rejection Filter ◽  
Rib Waveguides ◽  
On Chip

scholarly journals Thermo-optical properties of silicon nitride Mach-Zehnder interferometer for the on-chip quantum random number generator

2021 ◽  
Vol 2086 (1) ◽  
pp. 012164
Author(s):  
A Prokhodtsov ◽  
V Kovalyuk ◽  
P An ◽  
A Golikov ◽  
Y Konyshev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Random Number Generator ◽  
Temperature Stability ◽  
Spectral Shift ◽  
Zehnder Interferometer ◽  
Directional Couplers ◽  
Splitting Ratio ◽  
On Chip ◽  
Mach Zehnder Interferometer

Abstract Here we study the thermo-optical properties of an on-chip silicon nitride Mach-Zehnder interferometer (MZI). The spectral shift of the MZI is associated with a change in the chip temperature. This can be explained by a change in the splitting ratio of the directional couplers, as well as a significant change in phase difference between waveguide arms. We experimentally found a phase shift of 2π when heated by 1.67 °C and changes in resonant wavelength at different temperatures (dλ/dT) equal 12.0 pm/°C, theoretically obtained a formula for an arbitrary splitting ratio of the directional couplers in an MZI, and determined the temperature stability required to the device operation inside a quantum cryptography system.

Band-rejection filter with high extinction ratio using prism-waveguide cascaded coupling system

2020 ◽  
Vol 37 (5) ◽  
pp. 748
Author(s):  
Maowu Ran ◽  
Wenjuan Cai ◽  
Yincong Zhang ◽  
Xianping Wang ◽  
Yanchao She ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
High Extinction Ratio ◽  
Coupling System ◽  
Rejection Filter

High-extinction ratio polarization splitter based on an asymmetric directional coupler and on-chip polarizers on a silicon photonics platform

2020 ◽  
Vol 28 (15) ◽  
pp. 22899 ◽  
Author(s):  
Humaira Zafar ◽  
Raquel Flores ◽  
Ricardo Janeiro ◽  
Anatol Khilo ◽  
Marcus S. Dahlem ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Directional Coupler ◽  
Extinction Ratio ◽  
Polarization Splitter ◽  
High Extinction Ratio ◽  
On Chip

scholarly journals Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology

2013 ◽  
Vol 21 (9) ◽  
pp. 11132 ◽  
Author(s):  
Kiyotaka Sasagawa ◽  
Sanshiro Shishido ◽  
Keisuke Ando ◽  
Hitoshi Matsuoka ◽  
Toshihiko Noda ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Cmos Technology ◽  
Image Sensor ◽  
High Extinction Ratio ◽  
On Chip

Fabrication of Monolithic Integrated Bimaterial Resonant Uncooled IR Sensor

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hole Mobility ◽  
Micro Electro Mechanical System ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Ir Sensor ◽  
Cantilever Structure ◽  
Cmos Mems ◽  
On Chip ◽  
Micro Cantilever

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.

scholarly journals A high extinction ratio plasmonic SU-8 waveguide polarizer

2021 ◽  
Vol 487 ◽  
pp. 126798
Author(s):  
Peyman Malekzadeh ◽  
Gholam-Mohammad Parsanasab ◽  
Hamed Nikbakht ◽  
Ezeddin Mohajerani ◽  
Majid Taghavi ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
High Extinction Ratio

High extinction‐ratio microstructure fiber based on chalcogenide glasses

2021 ◽  
Author(s):  
Tiesong Xu ◽  
Minghui Zhong ◽  
Xiaolin Liang ◽  
Jia Liu ◽  
Bin Yan ◽  
...  
Keyword(s):  
Chalcogenide Glasses ◽  
Extinction Ratio ◽  
High Extinction Ratio ◽  
Microstructure Fiber
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