High-efficiency femtosecond ablation of silicon with GHz repetition rate laser source

2019 ◽  
Vol 44 (9) ◽  
pp. 2193 ◽  
Author(s):  
Konstantin Mishchik ◽  
Guillaume Bonamis ◽  
Jie Qiao ◽  
John Lopez ◽  
Eric Audouard ◽  
...  
Keyword(s):  
Repetition Rate ◽  
High Efficiency ◽  
Laser Source ◽  
Femtosecond Ablation

A sub-nanosecond narrow-linewidth pulsed laser source with controllable repetition rate

Laser Physics ◽  
2013 ◽  
Vol 23 (7) ◽  
pp. 075101
Author(s):  
L Q Niu ◽  
C X Gao ◽  
H D He ◽  
L Feng ◽  
Z Y Cao ◽  
...  
Keyword(s):  
Repetition Rate ◽  
Pulsed Laser ◽  
Laser Source ◽  
Narrow Linewidth

High-efficiency high-repetition-rate gain-switched operation around 3  μm in Cr2+:CdSe single-crystal laser pumped by fiber-laser-pumped Ho3+:YAG laser

2019 ◽  
Vol 44 (5) ◽  
pp. 1285 ◽  
Author(s):  
Oleg L. Antipov ◽  
Ilya D. Eranov ◽  
Mikhail P. Frolov ◽  
Yuri V. Korostelin ◽  
Vladimir I. Kozlovsky ◽  
...  
Keyword(s):  
Single Crystal ◽  
Fiber Laser ◽  
Repetition Rate ◽  
High Efficiency ◽  
High Repetition Rate ◽  
Yag Laser ◽  
High Repetition ◽  
Crystal Laser

20.2: High-Efficiency Green Laser Source for Compact Projectors

2009 ◽  
Vol 40 (1) ◽  
pp. 265 ◽  
Author(s):  
John Khaydarov ◽  
Andrei Shchegrov ◽  
Stepan Essaian ◽  
Greg Nemet ◽  
Suren Soghomonyan ◽  
...  
Keyword(s):  
High Efficiency ◽  
Green Laser ◽  
Laser Source

High efficiency, high repetition rate, all-fiber picoseconds pulse MOPA source with 125 W output in 15 μm fiber core

2012 ◽  
Vol 109 (2) ◽  
pp. 233-238 ◽  
Author(s):  
H. W. Chen ◽  
Y. Lei ◽  
S. P. Chen ◽  
J. Hou ◽  
Q. S. Lu
Keyword(s):  
Repetition Rate ◽  
High Efficiency ◽  
High Repetition Rate ◽  
Fiber Core ◽  
High Repetition

Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor

2014 ◽  
Vol 1635 ◽  
pp. 83-88
Author(s):  
Kenji Kikuchi ◽  
Shigeyuki Imura ◽  
Kazunori Miyakawa ◽  
Hiroshi Ohtake ◽  
Misao Kubota ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Efficiency ◽  
Repetition Rate ◽  
Dark Current ◽  
Carrier Density ◽  
High Efficiency ◽  
Visible Region ◽  
Laser Frequency ◽  
Image Sensors ◽  
High Quantum Efficiency

ABSTRACTWe examined the potential application of CuIn1-xGaxSe1-ySy (CIGS) film for visible light image sensors. CIGS chalcopyrite semiconductors, which are representative of high efficiency thin film solar cells, have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. The dark current of this hetero-junction was 10-9 A/cm2 at less than 7 V. Moreover, an avalanche multiplication phenomenon was observed at an applied voltage of over 8 V. However, this structure had sensitivity only in the ultraviolet light region due to the much lower carrier density of the Ga2O3 layer. We therefore used a tin-doped Ga2O3 (Ga2O3:Sn) layer deposited by pulsed laser deposition (PLD) for the n-type layer to increase the carrier density. The sensitivity of the visible region was observed in the Ga2O3:Sn/CIGS hetero-junction. We also investigated the influence of the laser frequency of the PLD on the transmittance of Ga2O3:Sn and the quantum efficiency of this hetero-junction. Ga2O3:Sn film deposited at a 0.1-Hz laser repetition rate had higher transmittance than at a 10-Hz repetition rate. The Ga2O3:Sn/CIGS hetero-junction also had a higher quantum efficiency with the lower rate (50%) than with the higher rate (30%).

Sign in / Sign up

Export Citation Format

Share Document