scholarly journals External cavity type-I quantum well cascade diode lasers with a tuning range of 440  nm near 3  μm

2018 ◽  
Vol 43 (18) ◽  
pp. 4473 ◽  
Author(s):  
Meng Wang ◽  
Takashi Hosoda ◽  
Jiang Jiang ◽  
Leon Shterengas ◽  
Gela Kipshidze ◽  
...  
Keyword(s):  
Quantum Well ◽  
Tuning Range ◽  
Diode Lasers ◽  
External Cavity ◽  
Type I

Passive mode-locking of 3.25um GaSb-based type-I quantum-well cascade diode lasers

2018 ◽  
Author(s):  
Leon Shterengas ◽  
Tao Feng ◽  
Takashi Hosoda ◽  
Gela Kipshidze ◽  
Meng Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Mode Locking ◽  
Type I ◽  
Passive Mode

scholarly journals Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

2017 ◽  
Vol 23 (6) ◽  
pp. 1-8 ◽  
Author(s):  
Leon Shterengas ◽  
Gela Kipshidze ◽  
Takashi Hosoda ◽  
Rui Liang ◽  
Tao Feng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Type I

External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm

2018 ◽  
Author(s):  
Meng Wang ◽  
Tao Feng ◽  
Takashi Hosoda ◽  
Gela Kipshidze ◽  
Jiang Jiang ◽  
...  
Keyword(s):  
Tuning Range ◽  
Diode Lasers ◽  
External Cavity

Evaluation of External-Cavity Diode Lasers for Raman Spectroscopy

1995 ◽  
Vol 49 (12) ◽  
pp. 1846-1851 ◽  
Author(s):  
Thomas F. Cooney ◽  
H. Trey Skinner ◽  
S. M. Angel
Keyword(s):  
Tuning Range ◽  
Diode Lasers ◽  
External Cavity ◽  
Focus Laser ◽  
Tunable Diode Lasers ◽  
Order Of Magnitude ◽  
Cavity Configuration ◽  
Mode Hopping ◽  
External Cavity Diode Lasers

We have evaluated the suitability of two commercial external-cavity, tunable diode lasers (tuning range approximately 770–800 nm) for use as Raman excitation sources. The tests consisted of relatively long-term (up to 14 h) measurements of wavelength and power stability as well as measurements of reproducibility of emission wavelength during repeated on/off cycling. We find that, for both tested lasers, the external cavity configuration either eliminates or dampens “mode-hopping” and wavelength drift to a level suitable for obtaining good-quality Raman spectra in most routine experiments. Over the course of several hours, wavelength change from both mode-hopping and drift is less than approximately 0.05 nm for the New-Focus laser and 0.07 nm for the SDL laser. Reproducibility over several on/off cycles is of the same order of magnitude. In all cases, resolution measurements were limited by the spectrographs.

3 µm GaSb-based Type-I Quantum-well Diode Lasers with Cascade Pumping Scheme

CLEO: 2013 ◽  
2013 ◽  
Author(s):  
Rui Liang ◽  
Takashi Hosoda ◽  
Gela Kipshidze ◽  
Leon Shterengas ◽  
Gregory Belenky
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Type I

InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 μm

1996 ◽  
Vol 450 ◽  
Author(s):  
G. W. Turner ◽  
H. K. Choi ◽  
M. J. Manfra ◽  
M. K. Connors
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Operating Temperature ◽  
Diode Lasers ◽  
Threshold Current ◽  
Ridge Waveguide ◽  
Pollution Monitoring ◽  
Type I ◽  
Waveguide Lasers ◽  
Ridge Waveguide Lasers

ABSTRACTRecently, mid-infrared diode lasers fabricated from the antimonide-based III-V compounds have been receiving increased attention for potential applications in trace gas detection, spectroscopy, pollution monitoring, and military systems. In this paper we will report the growth, fabrication, and modeling of high performance diode lasers with wavelengths longer than 3 μm. Molecular beam epitaxy (MBE) has been employed for the growth of these Type-I, strained quantum-well (QW) laser structures on GaSb and InAs substrates. The lasers consist of compressively strained InAsSb wells, tensile-strained InAlAsSb barriers, and lattice-matched AlAsSb cladding layers. QW lasers grown on GaSb substrates, with emission wavelengths of ∼3.9 μm, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/Facet has been obtained. Ridge-waveguide lasers have operated cw up to 128K. QW lasers grown on InAs substrates have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers on InAs have exhibited cw power of 215 mW/facet at 80 K, pulsed threshold current density as low as 30 A/cm2 at 80 K, characteristic temperatures (TO) between 30 and 40 K, and maximum pulsed operating temperature of 225 K. Ridge-waveguide lasers on InAs have cw threshold current of 12 mA at 100 K, and a maximum cw operating temperature of 175 K. In this paper we will present some of the key issues regarding the MBE growth, fabrication, and modeling of such lasers and discuss future directions for improved device performance.

Continuous wave operated 3.2 µm type-I quantum-well diode lasers with the quinary waveguide layer

2009 ◽  
Vol 24 (11) ◽  
pp. 115013 ◽  
Author(s):  
G Belenky ◽  
L Shterengas ◽  
D Wang ◽  
G Kipshidze ◽  
L Vorobjev
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Waveguide Layer ◽  
Type I
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