Thulium-doped tellurium oxide waveguide amplifier with 76  dB net gain on a silicon nitride chip: publisher’s note

2021 ◽  
Vol 46 (8) ◽  
pp. 1928
Author(s):  
Khadijeh Miarabbas Kiani ◽  
Henry C. Frankis ◽  
Hamidu M. Mbonde ◽  
Richard Mateman ◽  
Arne Leinse ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Tellurium Oxide

Four Wave Mixing in Tellurium-Oxide-Coated Silicon Nitride Ring Resonator

2020 ◽  
Author(s):  
Khadijeh Miarabbas Kiani ◽  
Hamidu Mbonde ◽  
Henry Fanki ◽  
Richard Mateman ◽  
Arne Leinse ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ring Resonator ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Tellurium Oxide

High-Q tellurium-oxide-coated silicon nitride microring resonators

2018 ◽  
Vol 44 (1) ◽  
pp. 118 ◽  
Author(s):  
Henry C. Frankis ◽  
Khadijeh Miarabbas Kiani ◽  
Daniel Su ◽  
Richard Mateman ◽  
Arne Leinse ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Microring Resonators ◽  
Tellurium Oxide ◽  
High Q

scholarly journals Thulium-doped tellurium oxide microring lasers integrated on a low-loss silicon nitride platform

2021 ◽  
Vol 11 (11) ◽  
pp. 3656
Author(s):  
Khadijeh Miarabbas Kiani ◽  
Henry C. Frankis ◽  
Richard Mateman ◽  
Arne Leinse ◽  
Andrew P. Knights ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Loss ◽  
Tellurium Oxide

Erbium-Doped Tellurium-Oxide-Coated Silicon Nitride Waveguide Amplifiers

2020 ◽  
Author(s):  
Henry C. Frankis ◽  
Hamidu M. Mbonde ◽  
Dawson B. Bonneville ◽  
Chenglin Zhang ◽  
Richard Mateman ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Tellurium Oxide ◽  
Waveguide Amplifiers ◽  
Erbium Doped

Thulium-doped tellurium oxide waveguide amplifier with 76  dB net gain on a silicon nitride chip

2019 ◽  
Vol 44 (23) ◽  
pp. 5788 ◽  
Author(s):  
Khadijeh Miarabbas Kiani ◽  
Henry C. Frankis ◽  
Hamidu M. Mbonde ◽  
Richard Mateman ◽  
Arne Leinse ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Tellurium Oxide

scholarly journals Four-wave mixing in high-Q tellurium-oxide-coated silicon nitride microring resonators

OSA Continuum ◽  
2020 ◽  
Author(s):  
Khadijeh Miarabbas Kiani ◽  
Hamidu M. Mbonde ◽  
Henry Frankis ◽  
Richard Mateman ◽  
Arne Leinse ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Four Wave Mixing ◽  
Microring Resonators ◽  
Wave Mixing ◽  
Tellurium Oxide ◽  
High Q

Lattice Imaging of Grain Boundaries in Ceramics

1977 ◽  
Vol 35 ◽  
pp. 114-115
Author(s):  
D. R. Clarke ◽  
G. Thomas
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
High Temperature Strength ◽  
Current Interest ◽  
Lattice Imaging ◽  
Special Significance ◽  
Structural Applications ◽  
Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

TEM Studies of Grain Boundary Films in Si3N4 Ceramics

1991 ◽  
Vol 49 ◽  
pp. 930-931
Author(s):  
H.-J. Kleebe ◽  
J.S. Vetrano ◽  
J. Bruley ◽  
M. Rühle
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Hot Isostatic Pressing ◽  
Amorphous Film ◽  
Liquid Phase Sintering ◽  
Second Phase ◽  
High Temperature Mechanical Properties ◽  
Triple Points ◽  
Boundary Films

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.

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