High Performance InGaAs/InAlAs Single-Photon Avalanche Diode with triple-Mesa Structure for Near Infrared Photon Detection

2021 ◽  
Author(s):  
Jishen Zhang ◽  
Haibo Wang ◽  
Gong Zhang ◽  
Kian Hua Tan ◽  
Satrio Wicaksono ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Single Photon ◽  
Photon Detection ◽  
Mesa Structure ◽  
Avalanche Diode ◽  
Infrared Photon

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

scholarly journals Gigacount/second Photon Detection Module Based on an 8x8 Single-Photon Avalanche Diode Array

2016 ◽  
pp. 1-1 ◽  
Author(s):  
Francesco Ceccarelli ◽  
Angelo Gulinatti ◽  
Ivan Labanca ◽  
Ivan Rech ◽  
Massimo Ghioni
Keyword(s):  
Single Photon ◽  
Diode Array ◽  
Photon Detection ◽  
Avalanche Diode

A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm

2012 ◽  
Vol 33 (5) ◽  
pp. 694-696 ◽  
Author(s):  
Eric A. G. Webster ◽  
Justin A. Richardson ◽  
Lindsay A. Grant ◽  
David Renshaw ◽  
Robert K. Henderson
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Detection ◽  
Imaging Technology ◽  
Avalanche Diode ◽  
Photon Detection Efficiency

Optical and near-infrared photon detection with superconducting devices

2011 ◽  
Author(s):  
Sae Woo Nam ◽  
Adriana Lita ◽  
Brice Calkins ◽  
Burm Baek ◽  
Marty Stevens ◽  
...  
Keyword(s):  
Near Infrared ◽  
Superconducting Devices ◽  
Photon Detection ◽  
Infrared Photon
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