Dynamically tunable ultra-narrowband perfect absorbers for the visible-to-infrared range based on microcavity integrated graphene pair

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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Preprocessing Images And Restore The Contours Of Objects Obtained In The Infrared Range

2018 14th IEEE International Conference on Signal Processing (ICSP) ◽

10.1109/icsp.2018.8652422 ◽

2018 ◽

Cited By ~ 1

Author(s):

Vyacheslav Voronin ◽

Evgenii Semenishchev ◽

Oxana Balabaeva ◽

Marina Pismenskova

Keyword(s):

Infrared Range

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InAs/GaSb superlattices grown by LP-MOCVD for ∼10μm wavelength infrared range

Infrared Physics & Technology ◽

10.1016/j.infrared.2011.07.009 ◽

2011 ◽

Vol 54 (6) ◽

pp. 478-481 ◽

Cited By ~ 1

Author(s):

Yuchun Chang ◽

Tao Wang ◽

Fei Yin ◽

Jingwei Wang ◽

Zhenyu Song ◽

...

Keyword(s):

Infrared Range

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Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Nanomaterials ◽

10.3390/nano11061373 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1373

Author(s):

Fadis F. Murzakhanov ◽

Boris V. Yavkin ◽

Georgiy V. Mamin ◽

Sergei B. Orlinskii ◽

Ivan E. Mumdzhi ◽

...

Keyword(s):

Boron Nitride ◽

Electron Irradiation ◽

Near Infrared ◽

Hexagonal Boron Nitride ◽

Optical Excitation ◽

High Energy ◽

Infrared Range ◽

Zero Field ◽

Zero Field Splitting ◽

Spin Resonance

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

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