scholarly journals Tunable, low-phase-noise microwave signals from an optically injected semiconductor laser with opto-electronic feedback

2017 ◽  
Vol 42 (16) ◽  
pp. 3181 ◽  
Author(s):  
Joseph S. Suelzer ◽  
Thomas B. Simpson ◽  
Preetpaul Devgan ◽  
Nicholas G. Usechak
2008 ◽  
Vol 25 (12) ◽  
pp. 2140 ◽  
Author(s):  
Kirill Volyanskiy ◽  
Johann Cussey ◽  
Hervé Tavernier ◽  
Patrice Salzenstein ◽  
Gérard Sauvage ◽  
...  

2010 ◽  
Author(s):  
R. E. Bartolo ◽  
A. B. Tventen ◽  
C. K. Kirkendall ◽  
P. W. Juodawlkis ◽  
W. Loh ◽  
...  

2021 ◽  
Author(s):  
Atsushi Ishizawa ◽  
Tadashi Nishikawa ◽  
Kenichi Hitachi ◽  
Koki Yoshida ◽  
Hideki Gotoh ◽  
...  

2021 ◽  
Vol 11 (9) ◽  
pp. 3961
Author(s):  
Jiayi Zhao ◽  
Yiying Gu ◽  
Jian Li ◽  
Xiaozhou Li ◽  
Mingshan Zhao ◽  
...  

To obtain low-phase-noise microwave signals with a widely tunable frequency range, an optoelectronic oscillator (OEO) was constructed on the basis of an optically injected semiconductor laser (OISL) for the generation of high-quality microwave signals. Our OEO relied on the effect of wavelength-selective amplification and the period-one (P1) oscillation under optical injection. The signal’s frequency stability, side-mode-suppression ratio (SMSR) and linewidth were optimized by the subharmonic microwave modulation technique in the OEO loop. The experimental results showed that the frequency of the signal obtained by the proposed OEO could be tuned up to 18 GHz. Using the dual-loop OEO structure, the SMSR was increased to 55 dB. Moreover, the phase noise of the obtained microwave signal was lower than −81 dBc/Hz at 1 kHz frequency offset and −119 dBc/Hz at 10 kHz frequency offset. This was achieved by introducing subharmonic microwave modulation in the OEO loop, respectively. Furthermore, via the utilization of a Fabry–Perot laser diode (FP-LD) in the proposed structure, a dual-loop OEO with different dual-frequency configurations (which could be tuned up to 12 and 18 GHz) was obtained.


Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 


2011 ◽  
Vol 25 (9) ◽  
pp. 817-822
Author(s):  
Zhiqiang Wei ◽  
Zushen Liu ◽  
Wu Huang ◽  
Shu Liu
Keyword(s):  

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