Influence of self-focusing of ultrashort laser pulses on optical third-harmonic generation at interfaces

2013 ◽  
Vol 38 (23) ◽  
pp. 5165 ◽  
Author(s):  
E. C. Barbano ◽  
S. C. Zílio ◽  
L. Misoguti
2016 ◽  
Vol 122 (9) ◽  
Author(s):  
Arpita Nath ◽  
J. A. Dharmadhikari ◽  
D. Mathur ◽  
A. K. Dharmadhikari

Laser Physics ◽  
2011 ◽  
Vol 21 (3) ◽  
pp. 500-504 ◽  
Author(s):  
A. A. Ionin ◽  
S. I. Kudryashov ◽  
L. V. Seleznev ◽  
D. V. Sinitsyn ◽  
E. S. Sunchugasheva ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


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